Abstract: Disclosed herein is a method of purifying and doping a population of semiconductor nanocrystals. The method includes mixing the population of semiconductor nanocrystals having a first material system and a first ligand with a set of particles in the presence of a first solvent, the set of particles having a second material system which is different from the first material system and a second ligand which is different from the first ligand, to form a mixture. The method also includes facilitating a ligand exchange and an ionic exchange in the mixture, altering the first material system of the population of semiconductor nanocrystals to a third material system, different from the first material system and the second material system. The method includes sonicating the mixture and isolating the population of semiconductor nanocrystals having the third material system and the second ligand from the mixture.

Abstract: Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.

Abstract: Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture.

Abstract: Disclosed herein is a method of synthesizing a nanocrystal. The method can include reacting a bismuth material, an antimony material, and a ligand together with a heat source. The method may also include injecting a sulfur precursor at a predetermined temperature and maintaining the predetermined temperature for a predetermined amount of time to form a plurality of precursor nanocrystals. The precursor nanocrystals may include Bi0.5Sb1.5S3 nanocrystals.

Abstract: Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture.

Abstract: Disclosed is a method of consolidating a powder. The method can include obtaining a powder of semiconductor nanocrystals, obtaining a material which will form a gas when heated, and combining the powder and the material into a combined powder. The method can also include consolidating the powder by applying heat and pressure to the combined powder.

Abstract: Embodiments of the invention include a method of producing a low contaminant, stoichiometrically controlled semiconductor material, the method comprising providing a colloidal suspension of a plurality of colloidally grown semiconductor nanocrystals, providing an inorganic ligand structure around a surface of the semiconductor nanocrystals of the plurality of semiconductor nanocrystals, drying the colloidal suspension into a powder, and pre-annealing the powder into a semiconductor material.

Abstract: A semiconductor nanocrystal composition that is stable and has high luminescent quantum yield. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor nanocrystal material. A method of making a semiconductor nanocrystal composition is also provides which includes synthesizing a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor material.

Abstract: A semiconductor nanocrystal composite comprising a semiconductor nanocrystal composition dispersed in an inorganic matrix material and a method of making same are provided. The method includes providing a semiconductor nanocrystal composition having a semiconductor nanocrystal core, providing a surfactant formed on the outer surface of the composition, and replacing the surfactant with an inorganic matrix material. The semiconductor nanocrystal composite emits light having wavelengths between about 1 and about 10 microns.

Abstract: A laser gain medium. The novel laser gain medium includes a host material, a plurality of quantum dots dispersed throughout the host material, and a plurality of laser active ions surrounding each of the quantum dots. The laser active ions are disposed in close proximity to the quantum dots such that energy absorbed by the quantum dots is non-radiatively transferred to the ions via a Forster resonant energy transfer, thereby exciting the ions to produce laser output. In an illustrative embodiment, each quantum dot is surrounded by an external shell doped with the laser active ions.

Abstract: A system and method for distinguishing a first light source from other light sources utilizes an image receiver that can selectively engage and disengage a filter. The filter can be configured to either block bands of light corresponding to the light being emitted by either the first source or the other sources. By sequentially engaging and disengaging the filter from the image receiver, the first light source may be distinguished from other light sources.

Abstract: A first population of semiconductor nanocrystals to create electron transport conduits, a second population so semiconductor nanocrystals to create hole transport conduits; and a third population of semiconductor nanocrystals to be used for either light absorption or light emission can be combined to form an inorganic nanostructure layer.

Abstract: A system and method for distinguishing a first light source from other light sources utilizes an image receiver that can selectively engage and disengage a filter. The filter can be configured to block bands of light corresponding to the light being emitted by either the first source or the other sources. By alternately engaging and disengaging the filter from the image receiver, the first light source may be distinguished from other light sources.

Abstract: A water-stable semiconductor nanocrystal complex and methods of making the same are provided. The water-stable semiconductor nanocrystal complex includes a semiconductor nanocrystal composition, a surfactant layer, and an outer layer. The outer layer and/or the surfactant layer can be cross-linked.

Abstract: Light-emitting devices are provided that incorporate one or more underlying LED chips or other light sources and a layer having one or more populations of nanoparticles disposed over the light source. The nanoparticles may absorb some light emitted by the underlying source, and re-emit light at a different level. By varying the type and relative concentration of nanoparticles, different emission spectra may be achieved. White light and specialty-color emission may be achieved. Devices also may include multiple LED chips, with nanoparticles disposed over one or more underlying chips in an array.

Abstract: A high-refractive index material that includes semiconductor nanocrystal compositions. The high-refractive index material has at least one semiconductor nanocrystal composition incorporated in a matrix material and has a refractive index greater than 1.5. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a II-VI, III-V, or IV-VI semiconductor material. A method of making a high-refractive index material includes incorporating, at least one semiconductor nanocrystal composition in a matrix material. An application of a high-refractive index material includes incorporating at least one semiconductor nanocrystal composition in a matrix material to form the high-refractive index material and depositing the high-refractive index material on the surface of a lighting device.

Abstract: The present invention relates to inks and more particularly, to fluorescent ink formulations including quantum dots for various printing processes such as inkjet, flexographic, screen printing, thermal transfer, and pens. The inks include one or more populations of fluorescent quantum dots dispersed in polymeric material, having fluorescence emissions between about 450 nm and about 2500 nm; and a liquid or solid vehicle. The vehicle is present in a ratio to achieve an ink viscosity, surface tension effective, drying time and other printing parameters used for printing processes.

Abstract: A display device that includes an underlying excitation source, a converting layer, and an optical filter layer. The underlying excitation source emits light in a spatial pattern that may or may not be altered in time and has a short wavelength capable of being at least partially absorbed by the overlying converting layer. The converting layer can be a contiguous film or pixels of quantum dots that can be dispersed in a matrix material. This converting layer is capable of absorbing at least a portion of the wavelength(s) of the light from the underlying excitation source and emitting light at one or more different wavelengths. The optical filter layer prevents the residual light from the excitation source that was not absorbed by the converting layer from being emitted by the display device.

Abstract: Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer.

Abstract: A semiconductor nanocrystal composition that is stable and has high luminescent quantum yield. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor nanocrystal material. A method of making a semiconductor nanocrystal composition is also provides which includes synthesizing a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor material.