Abstract: A nano-ionic memory device is provided. The memory device includes a substrate, a chemically inactive lower electrode provided on the substrate, a solid electrolyte layer provided on the lower electrode and including a silver (Ag)-doped telluride (Te)-based nano-material, and an oxidizable upper electrode provided on the electrolyte layer.
Type:
Application
Filed:
October 30, 2008
Publication date:
February 3, 2011
Applicant:
Ewha University-Industry Collaboration Foundation Univ