Abstract: Provided is a biological sensing system, including a nanowire field-effect transistor and a sensing chip. A gate terminal of the nanowire FET surrounds a gate of a silicon nanowire or a gate of a silicon nanobelt, diameter of the silicon nanowire is less than 20 nm. A sensing electrode of the sensing chip is coupled to the gate terminal of the nanowire FET. An area ratio of an electrode area of the sensing electrode to a total sensing chip area, a thickness ratio of an oxide thickness of sensing electrode to a bulk oxide dielectric film thickness of the sensing chip and a capacitance ratio of an electrode capacitor of the sensing electrode to a gate capacitor of the silicon nanowire or a gate capacitor of the silicon nanobelt are optimized by means of an equivalent circuit so that potential coupling efficiency between sensing electrode and gate is optimized.
Type:
Grant
Filed:
October 19, 2017
Date of Patent:
February 2, 2021
Assignees:
EXACT BIOCHIP CORPORATION, NATIONAL CHIAO TUNG UNIVERSITY
Abstract: Provided is a biological sensing system, including a nanowire field-effect transistor and a sensing chip. A gate terminal of the nanowire FET surrounds a gate of a silicon nanowire or a gate of a silicon nanobelt, diameter of the silicon nanowire is less than 20 nm. A sensing electrode of the sensing chip is coupled to the gate terminal of the nanowire FET. An area ratio of an electrode area of the sensing electrode to a total sensing chip area, a thickness ratio of an oxide thickness of sensing electrode to a bulk oxide dielectric film thickness of the sensing chip and a capacitance ratio of an electrode capacitor of the sensing electrode to a gate capacitor of the silicon nanowire or a gate capacitor of the silicon nanobelt are optimized by means of an equivalent circuit so that potential coupling efficiency between sensing electrode and gate is optimized.
Type:
Application
Filed:
October 19, 2017
Publication date:
April 19, 2018
Applicants:
EXACT BIOCHIP CORPORATION, NATIONAL CHIAO TUNG UNIVERSITY