Abstract: A light source module (100) with integrated wavemeter components (460, 494, 495) for stabilizing the output power and wavelength of a superluminescent diode or other broadband semiconductor light source (121) outputting a broadband output beam. A portion of the source output beam is directed to an optical edge filter (460) with a cross-over wavelength lying within the bandwidth of the output beam. The edge filter (460) divides the light it receives into a short-wavelength component and a long-wavelength component. These two components are then directed onto respective photodetectors (494, 495) that output respective signals to a wavemeter controller. The controller adjusts the drive current and/or temperature of the source to maintain the mean wavelength of the source's output beam at a set constant value according to a control parameter determined from a combination of the photodetector signals such as their ratio or the ratio between their difference and sum.

Abstract: A light source module comprising a plurality of semiconductor emitters, each configured to emit a beam at a different peak emission wavelength. Each beam is divergent with a more divergent, fast axis and a less divergent, slow axis. First single-axis focusing elements focus the beams from respective emitters in one of the fast and slow axis while the beams remain divergent in the other of the fast and slow axis. A beam combiner based on dichroic mirrors is arranged to bring the beams from the individual first single-axis focusing elements into a common optical axis. A common second single-axis focusing element is arranged to focus the combined beams output from the beam combiner in the other of the fast and slow axis which are then output from the light source module.

Abstract: A module accommodates multiple superluminescent light emitting diodes, SLEDs, 12r, 12g and 12b. The SLEDs are arranged in an enclosure and output respective light beams to propagate into free space within the enclosure. The individual light beams from the SLED sources are combined into a single beam path within the enclosure using beam combiners 40r-g, 40rg-b. Each beam combiner is realized as a planar optical element, the back side of which is arranged to receive a SLED beam and route it through the optical element to the front side where it is combined with another SLED beam that is incident on and reflected by the front side. The free-space propagating combined beam is output from the module via an optical fiber 42 (or through a window).

Abstract: An amplified spontaneous emission, ASE, source device combining a superluminescent light emitting diode, SLED, with a semiconductor optical amplifier, SOA, the SLED and SOA being arranged in series so that the SLED acts as a seed and the SOA acts as a broadband amplifier for the SLED output. Both SLED and SOA have a structure made up of a succession of epitaxial semiconductor layers which form a waveguide comprising a core of active region layers and surrounding cladding layers. The SLED and SOA confinement factors of the SLED and SOA, wherein confinement factor is the percentage of the optical mode power in the active region layers, is designed so that the SLED confinement factor is greater than that of the SOA by at least 20%. This allow higher power outputs, because the SLED power limits imposed by the onset of non-linear effects and catastrophic optical damage can be circumvented.

Abstract: A monolithic edge-emitting semiconductor diode array chip (100) comprises a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and/or a current sink connected to extract a modulated pull current through its associated diode.

Abstract: An edge-emitting semiconductor laser diode chip 15 with mutually opposed front and back end facet mirrors 22, 24. First and second ridges 261, 262 extend between the chip end facets 22, 24 to define first and second waveguides in an active region layer. Low and high slope efficiency laser diodes are thus formed that are independently drivable by respective electrode pairs 211, 231 and 212, 232. The single chip 15 thus incorporates two laser diodes sharing a common heterostructure, one with low slope efficiency optimized for low power operation with good power stability against temperature variations and random threshold current fluctuations in the close-to-threshold power regime, and the other with high slope efficiency optimized for high wall plug efficiency operation at higher output powers when the chip is operating far above threshold.

Abstract: A module accommodates multiple superluminescent light emitting diodes, SLEDs, 12r, 12g and 12b. The SLEDs are arranged in an enclosure and output respective light beams to propagate into free space within the enclosure. The individual light beams from the SLED sources are combined into a single beam path within the enclosure using beam combiners 40r-g, 40rg-b. Each beam combiner is realized as a planar optical element, the back side of which is arranged to receive a SLED beam and route it through the optical element to the front side where it is combined with another SLED beam that is incident on and reflected by the front side. The free-space propagating combined beam is output from the module via an optical fiber 42 (or through a window).

Abstract: An edge-emitting semiconductor laser diode chip 15 with mutually opposed front and back end facet mirrors 22, 24. First and second ridges 261, 262 extend between the chip end facets 22, 24 to define first and second waveguides in an active region layer. Low and high slope efficiency laser diodes are thus formed that are independently drivable by respective electrode pairs 211, 231 and 212, 232. The single chip 15 thus incorporates two laser diodes sharing a common heterostructure, one with low slope efficiency optimized for low power operation with good power stability against temperature variations and random threshold current fluctuations in the close-to-threshold power regime, and the other with high slope efficiency optimized for high wall plug efficiency operation at higher output powers when the chip is operating far above threshold.

Abstract: Superluminescent light emitting diode, SLED, devices and modules are provided. A multi-wavelength SLED device is fabricated by sequentially depositing adjacent epitaxial stacks onto a substrate to form a monolithic chip structure. Each epitaxial stack includes n-type layers, active layers and p-type layers. A ridge is formed in the p-type layers between the end facets of the chip to induce a waveguiding region in the active layers. Different ones of the epitaxial stacks emit at different wavelength ranges. A module is made by packaging one of the above SLED devices with another SLED device, with one inverted relative to the other to form a triangle of emitters as viewed end on, for example a triangle of red, green and blue emitters. The SLED devices and modules may find use in projection, endoscopic, fundus imaging and optical coherence tomography systems.

Abstract: A module accommodates multiple superluminescent light emitting diodes, SLEDs, 12r, 12g and 12b. The SLEDs are arranged in an enclosure and output respective light beams to propagate into free space within the enclosure. The individual light beams from the SLED sources are combined into a single beam path within the enclosure using beam combiners 40r-g, 40rg-b. Each beam combiner is realized as a planar optical element, the back side of which is arranged to receive a SLED beam and route it through the optical element to the front side where it is combined with another SLED beam that is incident on and reflected by the front side. The free-space propagating combined beam is output from the module via an optical fiber 42 (or through a window).

Abstract: A source module suitable for an optical coherence tomography system. The source module comprises a source operable to emit a divergent, source output beam either of circular cross-section (e.g. as output by a vertical cavity surface emitting laser) or of elliptical cross-section (e.g. as output by an edge-emitting semiconductor laser or diode). Collimation optics are provided to convert the source output beam into a non-divergent, collimated beam of elliptical cross-section having a major axis and a minor axis. A cylindrical lens is arranged with its plano axis aligned with the major axis of the elliptical collimated beam and its power axis aligned with the minor axis of the elliptical collimated beam so as to form a line focus extending along the major axis of the elliptical collimated beam.

Abstract: A depolarizer for a broadband optical source to split the source beam by power, not by polarization state, and route the components into respective light paths. A polarization rotator arranged in one of the light paths rotates the polarization state of that beam component to make it orthogonal to that of the other. The components are then recombined by a combiner and output. A variable optical attenuator is arranged in one of the light paths, which during operation is adjusted by a controller to maintain power equalization between the light paths and hence depolarization performance. The controller receives power measurements from the light paths and from after the combiner via respective sensors. With this feedforward design reminiscent of a Mach-Zehnder interferometer the light from a light source which generates highly polarized light can be depolarized in theory with zero insertion loss and in practice with losses of about 1 dB.

Abstract: An amplified stimulated emission, ASE, source device combining a superluminescent light emitting diode, SLED, with a semiconductor optical amplifier, SOA, the SLED and SOA being arranged in series so that the SLED acts as a seed and the SOA acts as a broadband amplifier for the SLED output. Both SLED and SOA have a structure made up of a succession of epitaxial semiconductor layers which form a waveguide comprising a core of active region layers and surrounding cladding layers. The SLED and SOA confinement factors of the SLED and SOA, wherein confinement factor is the percentage of the optical mode power in the active region layers, is designed so that the SLED confinement factor is greater than that of the SOA by at least 20%. This allow higher power outputs, because the SLED power limits imposed by the onset of non-linear effects and catastrophic optical damage can be circumvented.

Abstract: A source module suitable for an optical coherence tomography system. The source module comprises a source operable to emit a divergent, source output beam either of circular cross-section (e.g. as output by a vertical cavity surface emitting laser) or of elliptical cross-section (e.g. as output by an edge-emitting semiconductor laser or diode). Collimation optics are provided to convert the source output beam into a non-divergent, collimated beam of elliptical cross-section having a major axis and a minor axis. A cylindrical lens is arranged with its plano axis aligned with the major axis of the elliptical collimated beam and its power axis aligned with the minor axis of the elliptical collimated beam so as to form a line focus extending along the major axis of the elliptical collimated beam.

Abstract: A module accommodates multiple superluminescent light emitting diodes, SLEDs, 12r, 12g and 12b. The SLEDs are arranged in an enclosure and output respective light beams to propagate into free space within the enclosure. The individual light beams from the SLED sources are combined into a single beam path within the enclosure using beam combiners 40r-g, 40rg-b. Each beam combiner is realized as a planar optical element, the back side of which is arranged to receive a SLED beam and route it through the optical element to the front side where it is combined with another SLED beam that is incident on and reflected by the front side. The free-space propagating combined beam is output from the module via an optical fiber 42 (or through a window).

Abstract: Superluminescent light emitting diode, SLED, devices and modules are provided. A multi-wavelength SLED device is fabricated by sequentially depositing adjacent epitaxial stacks onto a substrate to form a monolithic chip structure. Each epitaxial stack includes n-type layers, active layers and p-type layers. A ridge is formed in the p-type layers between the end facets of the chip to induce a waveguiding region in the active layers. Different ones of the epitaxial stacks emit at different wavelength ranges. A module is made by packaging one of the above SLED devices with another SLED device, with one inverted relative to the other to form a triangle of emitters as viewed end on, for example a triangle of red, green and blue emitters. The SLED devices and modules may find use in projection, endoscopic, fundus imaging and optical coherence tomography systems.

Abstract: A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

Abstract: A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

Abstract: A depolarizer for a broadband optical source to split the source beam by power, not by polarization state, and route the components into respective light paths. A polarization rotator arranged in one of the light paths rotates the polarization state of that beam component to make it orthogonal to that of the other. The components are then recombined by a combiner and output. A variable optical attenuator is arranged in one of the light paths, which during operation is adjusted by a controller to maintain power equalization between the light paths and hence depolarization performance. The controller receives power measurements from the light paths and from after the combiner via respective sensors. With this feedforward design reminiscent of a Mach-Zehnder interferometer the light from a light source which generates highly polarized light can be depolarized in theory with zero insertion loss and in practice with losses of about 1 dB.

Abstract: A low power, side-emitting semiconductor laser diode is provided. The laser diode is formed from a semiconductor heterostructure having an active layer sandwiched between an n-type layer and a p-type layer, wherein the active layer forms a gain medium of width W. Front and back reflectors of reflectivity Rf and Rb are arranged on opposing side facets of the semiconductor heterostructure part to form a cavity of length L containing at least a part of the active layer which thus forms the gain medium for the laser diode, the gain medium having an internal loss ?i. To achieve stable, low power operation close to threshold, the laser diode is configured with the following parameter combination: width W: 1 ?m?W?2 ?m; cavity length L: 100 ?m?L?600 ?m; internal loss ?i: 0 cm?1??i?30 cm?1; back reflectivity Rb: 100?Rb?80%; and front reflectivity Rf: 100?Rf?60%.