Abstract: Provided herein is an MV DRAM device capable of storing multiple value levels using an SET device. The device includes one or more word lines; one or more bitlines; a DRAM cell connected to intersections of the word lines and the bitlines; a current source transistor having a source connected to a power supply voltage and a gate and a drain connected to the bitlines; an SET (single electron transistor) device having a gate connected to the bitlines and a source connected to the ground voltage; and a transistor connected between the bitlines and the drain of the SET device, wherein the gate of the transistor is connected to the ground voltage. According to the MV DRAM device of the present invention, since two or more multiple value data are stored in a cell, it is possible to increase the storage density of the device.

Abstract: Provided herein is a serial flash memory device and precharging method thereof in which a single local bit-line data is sensed in synchronization with a clock. The method includes precharging two or more local bit-lines in synchronization with a first clock; and disprecharging one of the two local bit-lines in synchronization with a second clock and sensing and amplifying data of the other local bit-line. Accordingly, two precharged local bit-lines are not adjacent to each other, thereby eliminating a coupling noise effect. In addition, the time for performing the precharging operation and the sensing operation is easily secured, compared to the prior precharging method in which corresponding local bit-lines are precharged at every clock.

Abstract: Provided herein is a serial flash memory device and precharging method thereof in which a single local bit-line data is sensed in synchronization with a clock. The method includes precharging two or more local bit-lines in synchronization with a first clock; and disprecharging one of the two local bit-lines in synchronization with a second clock and sensing and amplifying data of the other local bit-line. Accordingly, two precharged local bit-lines are not adjacent to each other, thereby eliminating a coupling noise effect. In addition, the time for performing the precharging operation and the sensing operation is easily secured, compared to the prior precharging method in which corresponding local bit-lines are precharged at every clock.