Abstract: A memory device with burn-in capability is achieved. The device comprises, first, an array of memory cells, and, second, a burn-in test block. The burn-in test block comprises a memory address generator, a data pattern generator, and a command pattern generator. The burn-in test block is capable of writing data to the memory cells, of turning ON word lines in the array, and of holding the array in a static mode. A method to perform wafer level burn-in with this device is disclosed.
Type:
Grant
Filed:
July 11, 2002
Date of Patent:
December 9, 2003
Assignee:
ExronTechnology, Inc.
Inventors:
Jeng-Tzong Shih, Shi-Huei Liu, Bor-Doou Rong