Patents Assigned to "FACTORY OF NEW MATERIALS" LLC
  • Method of amplifying magneto-optical kerr effect by using photon crystal structures, and photon crystal having amplified magneto-optical kerr effect, method of fabricating photon crystal
    Patent number: 9110316
    Abstract: A method of amplifying a magneto-optical Kerr effect by using photon crystal structures, and a photon crystal having an amplified magneto-optical Kerr effect, and a method of fabricating the photon crystal. The method of amplifying a magneto-optical Kerr effect by using photon crystal structures includes amplifying the magneto-optical Kerr effect by fabricating a magnetic photon crystal including a crystal magnet and using a periodically-structured surface of the crystal magnet.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: August 18, 2015
    Assignees: SAMSUNG ELECTRONICS CO., LTD., FACTORY OF NEW MATERIALS LLC
    Inventors: Andrey Anatolevich Eliseev, Nina Aleksandrovna Sapoletova, Kirill Sergeevich Napolskiy, Andrey Anatolevich Grunin, Andrey Anatolevich Fedyanin
  • METHOD OF AMPLIFYING MAGNETO-OPTICAL KERR EFFECT BY USING PHOTON CRYSTAL STRUCTURES, AND PHOTON CRYSTAL HAVING AMPLIFIED MAGNETO-OPTICAL KERR EFFECT, METHOD OF FABRICATING PHOTON CRYSTAL
    Publication number: 20130141773
    Abstract: A method of amplifying a magneto-optical Kerr effect by using photon crystal structures, and a photon crystal having an amplified magneto-optical Kerr effect, and a method of fabricating the photon crystal. The method of amplifying a magneto-optical Kerr effect by using photon crystal structures includes amplifying the magneto-optical Kerr effect by fabricating a magnetic photon crystal including a crystal magnet and using a periodically-structured surface of the crystal magnet.
    Type: Application
    Filed: November 30, 2012
    Publication date: June 6, 2013
    Applicants: "FACTORY OF NEW MATERIALS" LLC, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Samsung Electronics Co., Ltd., "Factory Of New Materials" LLC