Abstract: A method of treating substrate surfaces with the aid of a plasma such as etching, deposition etc. In the practice of the method, the plasma flows from its place of generation to the treatment-chamber, and in which method the plasma-generator is flushed through with a flushing gas. Preferably, and firstly after the flushing gas has passed the cathodes, the reactant is fed to the plasma-generator. The invention includes the reactor necessary for carrying out the method.
Type:
Grant
Filed:
June 13, 1988
Date of Patent:
October 3, 1989
Assignee:
Faculty of Physics Eidhoven University of Technology
Inventors:
Daniel C. Schram, Gerardus M. W. Kroesen