Patents Assigned to FACULTY OF SCIENCE AND TECHNOLOGY NEW UNIVERSITY OF LISBON
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150236169
    Abstract: Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.
    Type: Application
    Filed: May 5, 2015
    Publication date: August 20, 2015
    Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, FACULTY OF SCIENCE AND TECHNOLOGY NEW UNIVERSITY OF LISBON
    Inventors: Sang Hee PARK, Chi Sun HWANG, Chun Won BYUN, Elvira M.C. FORTUNATO, Rodrigo F.P. MARTINS, Ana R.X. BARROS, Nuno F.O. CORREIA, Pedro M.C. BARQUINHA, Vitor M.L. FIGUEIREDO
  • Semiconductor device and method of manufacturing the same
    Patent number: 9053937
    Abstract: Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.
    Type: Grant
    Filed: April 14, 2011
    Date of Patent: June 9, 2015
    Assignees: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, FACULTY OF SCIENCE AND TECHNOLOGY NEW UNIVERSITY OF LISBON
    Inventors: Sang Hee Park, Chi Sun Hwang, Chun Won Byun, Elvira M. C. Fortunato, Rodrigo F. P. Martins, Ana R. X. Barros, Nuno F. O. Correia, Pedro M. C. Barquinha, Vitor M. L. Figueiredo
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110253997
    Abstract: Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.
    Type: Application
    Filed: April 14, 2011
    Publication date: October 20, 2011
    Applicants: FACULTY OF SCIENCE AND TECHNOLOGY NEW UNIVERSITY OF LISBON, ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang Hee Park, Chi Sun Hwang, Chun Won Byun, Elvira M.C. Fortunato, Rodrigo F.P. Martins, Ana R.X. Barros, Nuno F.O. Correia, Pedro M.C. Barquinha, Vitor M.L. Figueiredo