Abstract: A semiconductor integrated circuit device includes a high performance interconnect structure which comprises a plurality of interconnects, with each interconnect being structurally separated from the remaining interconnects except at electrical contact points. In one embodiment, each interconnect is substantially surrounded by a layer of dielectric material, there being gaps between each adjacent layer of surrounding dielectric material. Another embodiment, a layer of electrically conductive material is formed over the surrounding dielectric layer preferably filling in the gaps between adjacent layers of surrounding dielectric material. The layer of electrically conductive material acts as a ground plane and heat sink.

Abstract: A thick glass passivation layer comprises an alternating sequence of structurally dissimilar but chemically compatible layers of material over the surface of a substrate, so as to provide sufficient elasticity to compensate for thermal expansion differences that would otherwise crack causing in thick monolithic films. A first layer comprises glass that has been deposited over the surface of the structure using chemical vapor deposition. A second layer of the passivating glass material is then provided on the substrate using a spinning technique. The chemical vapor deposition and spun layers continue to be applied in an alternating fashion until a film having the desired thickness is formed. Each chemical vapor deposition layer provides an elastic cushion for the subsequently spun layers. The spun layers allows a planar topography to be maintained without the need for high temperatures.

Abstract: A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer between the doped silicon substrate and the refractory metal silicide conductive layer. Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer of refractory metal between the refractory metal nitride layer and the silicon substrate.

Abstract: A monochrome or color imager having interlaced, non-interlaced or pseudo-interlaced readout utilizing pixels arranged in groups forming equilateral triangles which are interleaved. Separate vertical shift registers driven by different clock signals to implement different forms of interlaced, non-interlaced and pseudo interlaced signal readout are located on each side of the rectangular array and are coupled to alternating row address lines and different groups of column lines in the array. The clock signals driving each shift register can be controlled to select monochrome or color operation in one of the above noted modes of readout. A horizontal shift register is connected to the gates of MOS coupling transistors which couple the column or bit lines of the array to a pair of monochrome outputs, while a second shift register is connected to the gates of MOS coupling transistors which couple the column or bit lines of the array to a trio of color outputs for color output signals.

Abstract: An improved integrated injection logic structure utilizes a current mirror in conjunction with each switching transistor (M.sub.1, M.sub.2) of the integrated injection logic circuit of this invention by connecting one of a plurality of collectors (O.sub.0, P.sub.0) of the switching transistor to the base of said switching transistor. In this manner, the current flowing through conducting switching transistors is limited by the current mirror. This limited current flow through conducting switching transistors, as well as the use of voltage pull up means (D.sub.1, D.sub.2) connected to the collectors of the switching transistors prevents the saturation of conducting switching transistors.

Abstract: Three sets of pincer units depend from a flat palm, each pincer unit having a pinching gap at its distal end for engaging a loaded circuit board by its edges and holding it in a spaced-apart relationship with the palm. Each pincer unit includes a finger having a flange at its distal end and a thumb slideably mounted on the finger so as to define a variable pinching gap. The fingers are mounted for prehensiling movement away from one another for bracketing a board to be picked up and toward one another so that the board to be picked up may be squeezed between them.The invention includes a method for picking up a loaded circuit board which involves bracketing a board to be picked up between a set of pincer units, squeezing the board by moving the pincer units toward one another against opposing edges of the board while simultaneously pinching each edge engaged with the pincer units.

Abstract: A closed loop integrated circuit temperature stabilizer 10 has an on-chip temperature sensor 12 for supplying a voltage indication of temperature to an op amp 22 which maintains chip temperature equilibrium by controlling a load transistor 30 which draws current through on-chip heating means 16.

Abstract: Apparatus is provided for delaying an electrical signal present at a selected node. The apparatus includes a first multiplexer 71 which connects one of eight inputs I.sub.0 -I.sub.7 to an output terminal 75, an adjustable length delay line 72 is coupled between each pair of input terminals I.sub.0, I.sub.7, and the input signal is then supplied to the first input terminal of the multiplexer 71. The delay lines 72 are trimmed to create the desired time delay between input terminal 74 and output terminal 75.For larger adjustments of the time delay for the signal is supplied to input terminal 74 and supplied to another terminal 78 connected to the input terminal I.sub.0 of another multiplexer 61. Logic gates 62-67 are connected between each pair of terminals I.sub.0 -I.sub.6 of the second multiplexer 61. A coarser adjustment of the time delay than achievable with the delay lines 72 is made by switching of an appropriate input terminal of the second multiplexer 61 to the output terminal 69 of the multiplexer 61.

Abstract: A method for statistically calibrating an analog-to-digital converter with an electronic test system. A digital-to-analog converter which has been calibrated by premeasured weighting coefficients with respect to two-state orthogonal signals is excited with two state signals at each input bit which together represent a single signal with uniform amplitude probability with respect to time, and wherein each excitation signal is orthogonal with respect to all other excitation signals. The output of the digital-to-analog converter is detected by the analog-to-digital converter under test. The digital time domain output signals are then mapped into a transform domain to obtain weighting coefficients of each bit of the output response. Finally the transform domain weighting coefficients are weighted by the reciprocal of the premeasured weighting coefficients to obtain the unbiased weight of each bit of the analog-to-digital converter under test.

Abstract: In a semiconductor device, laser energy is used to selectively heat various SiO.sub.2 based materials to elevated temperatures while maintaining the active device region and electrical interconnects at relatively low temperatures, to for example, induce densification and/or flow of the SiO.sub.2 based material to round off sharp edges and stops, without damaging or affecting the active region and electrical interconnects.

Abstract: An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.

Abstract: A method and circuitry (5) for enhancing the reproducibility and reliability of circuitry for reading a memory array (10a, 10b, 10a', 10b') provides a dynamically generated reference voltage for the sensing circuitry. The invention senses the highest word line voltage and communicates a voltage derived therefrom to the sensing circuitry (26, 27, 28, 29; 26', 27', 28', 29'; 32, 33) to provide a reference voltage. A voltage clamp (62) is coupled to the circuitry for communicating the highest word line voltage (50) to prevent the reference voltge from following the word line too low during transitions. The invention is rendered compatible with the existing write circuitry associated with the memory array (10a, 10b, 10a', 10b') by the provision of disabling circuitry (65) coupled to the communicating circuitry (55, 57) and to the clamp (62).

Abstract: A semiconductor digital memory such as a charge coupled device is provided with error detection capability. Error logic responsive to a group of data on the input bus generates a first error code which is stored in memory along with the group of data. When the data is retrieved from memory similar error logic generates a second error code. The first and second error codes are compared, and if the codes are identical the data is assumed to be correct. If codes differ then the data is discarded or errors therein are identified and corrected.

Abstract: A temperature-compensated reference voltage circuit includes a transistor having a positive temperature coefficient of current. A circuit for establishing a predetermined current in the positive-temperature-coefficient-of-current transistor is connected to that transistor. A predetermined resistance serially connects the positive-temperature-coefficient-of-current transistor with a transistor having negative temperature coefficient of base-to-emitter voltage. The temperature-compensated reference voltage is established between the transistors. The temperature-compensated reference voltage circuit is particularly useful in a supply voltage sense amplifier circuit for thermal printhead drive transistors or other load elements. The sense amplifier circuit includes a circuit for comparing the reference voltage and a supply voltage. An output is adapted to be connected to a load for receiving the supply voltage.

Abstract: A method and circuitry are disclosed for correcting bit errors introduced by random events in a data recirculating memory, such as a charge coupled memory device or a bubble memory. The bit errors, caused by random events such as by alpha particle bombardment or other causes, are corrected in circuitry that generates row and column parity bits corresponding to various segments of the information stored in the memory. Changes in the row and column parity bits uniquely define the location of failed bits circulating through the memory even though each failed bit has no fixed address, so that error detection circuitry thereafter may correct the error during the next or a subsequent bit recirculating cycle. The invention facilitates the use of very large memories, for example, on the order of one billion bits or more.

Abstract: A data latch of the kind having at least two operative modes, a transmitting or transparent mode or condition for transmitting data signals through the latch, and a latching mode or condition for latching and temporary storage by feedback of data signals in the latch. According to the invention there is provided in the data latch a pregate for pregating feedback signals in the latch. The pregate is adapted and coupled to provide positive feedback data signals for reinforcing previously entered data in the latching mode, and gating signals for passing input data in the transmitting mode.

Abstract: An electronic circuit for simultaneously erasing all the information stored in an electronic information storage device and entering a predetermined new pattern of information into the storage device comprises a plurality of bistable semiconductor cells with an additional transistor current-conducting region included on a predetermined side of each cell. The additional current-conducting regions in the cells along each word row are coupled to an additional word line which connects to a current switch for the row. At an appropriate pulse signal, the current switch activates to switch row current temporarily from the standard current-source word line, which conducts holding current to the row during normal operation, to the additional word line, thereby erasing the old data and entering the new information bits.

Abstract: In a bias circuit including at least a pair of bipolar transistors interconnected to function as active loads, two junction field effect transistors are interconnected such that the source of one transistor is connected to the emitter of the first of the pair of bipolar transistors and the source of the second junction field effect transistor is connected to the emitter of the second of said bipolar transistors, and the gate electrodes of the first and second junction field effect transistors are electrically connected to each other and to the drain electrodes of both the first and second junction field effect transistors. Alternatively, the drain electrodes of the first and second junction field effect transistors are connected to a common bus and the gate electrodes are connected to a low impedance node.

Abstract: A transistor interface circuit for switching analog differential pairs in response to a flip-flop or combinational logic, both output signals of which remain either high or low during switching transitions. This circuitry prevents the differential pair from momentarily saturating or shutting off during the switching transition.

Abstract: A precision motor speed control system employing a phase locked loop in which the inertial mass of the motor, its tachometer and motor driven devices, such as fly wheels, tape transports, etc., perform the functions of the usual low pass filter and voltage control oscillator.