Patents Assigned to Fantom Materials, Inc.
  • Process for making low-resistivity CVC
    Publication number: 20170241016
    Abstract: A process for making low resistivity CVC silicon carbide. Applicants have developed a better process for adding nitrogen to silicon carbide which has the safety economic advantages of doping with N2 with the ease of N2 release advantages of using NH3. Preferred embodiments of the present invention include a NH3 generator with a source of H2 and a source of N2 and an arc discharge apparatus adapted to produce NH3 gas from a combination of the H2 and N2 sources.
    Type: Application
    Filed: December 12, 2015
    Publication date: August 24, 2017
    Applicant: Fantom Materials, Inc.
    Inventors: Lauren Bolton, Kenneth Paul Hoffman