Abstract: A monolithic semiconductor device that provides a diode having PIN diode characteristics. The diode has anode and cathode mesas having contacts in substantially the same plane to facilitate automatic bonding. One of the contacts is insulated from its associated mesa and has a conductive layer that extends between the mesas and through an insulating layer to make direct contact with the substrate, thereby isolating the flow of current from any intervening I regions. The conductive layer may include a portion of narrow cross section, to function as a fuse.

Abstract: A gallium arsenide tunnel diode is fabricated using planar techniques from a wafer of gallium arsenide that has been heavily doped to form a P region. Tin is plated onto an exposed section of a surface of the wafer and then melted to cause individual tin atoms to diffuse only a few atomic layers into the wafer, creating a heavily doped N region. Metal contact layers are then formed over the tin and on the opposite surface of the wafer. An oxidation inhibitor is used during the plating and a scavenging agent is used during the melting to insure intimate contact between the tin and the wafer.

Abstract: A monolithic semiconductor device that provides a diode having PIN diode characteristics. The diode has anode and cathode mesas having contacts in substantially the same plane to facilitate automatic bonding. One of the contacts is insulated from its associated mesa and has a conductive layer that extends between the mesas and through an insulating layer to make direct contact with the substrate, thereby isolating the flow of current from any intervening I regions. The conductive layer may include a portion of narrow cross section, to function as a fuse.