Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
Type:
Application
Filed:
January 12, 2010
Publication date:
June 10, 2010
Applicants:
IMEC, FernUniversitat Hagen
Inventors:
Renat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
Type:
Grant
Filed:
September 8, 2003
Date of Patent:
April 27, 2010
Assignees:
IMEC, FernUniversitat Hagen
Inventors:
Renat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
Type:
Application
Filed:
September 8, 2003
Publication date:
June 3, 2004
Applicants:
Interuniversitair Microelektronica Centrum (IMEC), FernUniversitat Hagen
Inventors:
Renat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner