Abstract: The invention provides an aqueous solution capable of selectively protecting a nitrogen-containing silicon compound from corrosion by a treating solution for etching, cleaning or the like, etching oxygen-containing, carbon-containing silicon in particular, and making a large etch rate difference between a nitrogen-containing silicon compound and an oxygen-containing silicon compound, and a process for producing electronic parts as well. The invention is embodied by a treating solution for electronic parts that is an aqueous solution containing one or two or more of anionic surface active agents represented by the following formulae (1), (2) and (3), and a process for producing an electronic part. wherein R1, R2, and R3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X1 stands for a functional group capable of becoming an anionic ion.

Abstract: The invention provides an aqueous solution capable of selectively protecting a nitrogen-containing silicon compound from corrosion by a treating solution for etching, cleaning or the like, etching oxygen-containing, carbon-containing silicon in particular, and making a large etch rate difference between a nitrogen-containing silicon compound and an oxygen-containing silicon compound, and a process for producing electronic parts as well. The invention is embodied by a treating solution for electronic parts that is an aqueous solution containing one or two or more of anionic surface active agents represented by the following formulae (1), (2) and (3), and a process for producing an electronic part. wherein R1, R2, and R3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X1 stands for a functional group capable of becoming an anionic ion.

Abstract: The invention has for its object the provision of a cleaner capable of removing particles and metal impurities present on the surface of a wafer without corrosion of wirings, gates or the like yet at normal temperature in a short period of time and with a one-pack type solution. To accomplish the above object, the invention provides a cleaner that is an aqueous solution containing phosphoric acid, hydrofluoric acid, and ammonia and/or amine, and having a pH ranging from 2 to 12, wherein the aqueous solution comprises 0.5 to 25 mass % of phosphoric acid, 0.1 to 10 mass % of ammonia and/or amine, and 5×10?3 to 5.0 mass % of hydrofluoric acid.

Abstract: The invention has for its object the provision of a cleaner capable of removing particles and metal impurities present on the surface of a wafer without corrosion of wirings, gates or the like yet at normal temperature in a short period of time and with a one-pack type solution. To accomplish the above object, the invention provides a cleaner that is an aqueous solution containing phosphoric acid, hydrofluoric acid, and ammonia and/or amine, and having a pH ranging from 2 to 12, wherein the aqueous solution comprises 0.5 to 25 mass % of phosphoric acid, 0.1 to 10 mass % of ammonia and/or amine, and 5×10?3 to 5.0 mass % of hydrofluoric acid.