Abstract: Disclosed is a system and a method for real-time monitoring of particles in ozone comprising an ozone reduction device for heating and reducing an ozone provided by an ozone source into an oxygen along a spiral conveying path and a particle counter for real-time monitoring of particles in the oxygen. The ozone source optionally shunts to supply a portion of the ozone to the ozone reduction device and another portion of the ozone to a process equipment, the particle counter can be used to monitor particles in the oxygen in real time while the process equipment is performing a manufacturing process, thereby preventing other non-ozone particles contained in the ozone from causing pollution, and also proving that an ozone gas provided by an ozone generator as the ozone source or an ozone tail gas emitted by the process equipment as the ozone source does not contain polluting particles.

Abstract: Disclosed is an ozone reduction device used to reduce an ozone provided by an ozone source into an oxygen. The ozone reduction device comprises a gas inlet duct, a gas delivery tube, a heating element and a gas outlet duct. The gas inlet duct is communicated to the ozone source. The gas delivery tube introduces the ozone provided by the ozone source through the gas inlet duct, and the gas delivery tube transports the ozone along a spiral delivery path. The heating element is used to provide a thermal energy to heat the ozone transported by the gas delivery tube, so that the ozone is heated by the thermal energy and reduced to an oxygen when flowing along the spiral delivery path. The gas outlet duct is communicated to the gas delivery tube and used to discharge the oxygen obtained by reducing the ozone.

Abstract: Disclosed are an LED light and a heat dissipation device thereof. The LED light comprises at least one LED light bead disposed on the heat dissipation device. The heat dissipation device comprises a circuit board having a first metal layer and a second metal layer located on two opposite sides respectively; and a heat sink. The LED light bead is welded to the first metal layer. The second metal layer is welded to the heat sink. The circuit board has heat conductive holes, so that a heat energy generated by the LED light bead can be transferred to the heat sink through the heat conductive holes. Some of the heat conductive holes can be optionally filled with heat conductive material columns, so that the heat energy generated by LED light bead can be conducted to the heat sink through the heat conductive material columns in the heat conductive holes.

Abstract: Disclosed are an LED light and a heat dissipation device thereof. The LED light comprises at least one LED light bead disposed on the heat dissipation device. The heat dissipation device comprises a circuit board having a first metal layer and a second metal layer located on two opposite sides respectively; and a heat sink. The LED light bead is welded to the first metal layer. The second metal layer is welded to the heat sink. The circuit board has heat conductive holes, so that a heat energy generated by the LED light bead can be transferred to the heat sink through the heat conductive holes. Some of the heat conductive holes can be optionally filled with heat conductive material columns, so that the heat energy generated by LED light bead can be conducted to the heat sink through the heat conductive material columns in the heat conductive holes.

Abstract: Disclosed are a hollow cathode discharge assistant transformer coupled plasma source and an operation method of the same. A reaction chamber with an annular channel is provided, and a ferrite transformer with a first ferrite magnetic core wound with a first coil and a second ferrite magnetic core wound with a second coil and a drive power source is provided. The drive power source applies an AC power supply with a first voltage to the first coil to generate an alternating magnetic field. The second coil generates a second voltage by inducing the alternating magnetic field to excite a working gas in the annular channel into a plasma through a hollow cathode discharge mechanism. The annular channel induces the alternating magnetic field through a transformer coupled plasma mechanism to generate an induced electric field to excite the plasma to form an electric current in the annular channel.

Abstract: Disclosed are a device and a method for gas concentration measurement comprising a gas detection chamber, a temperature sensing element, a pressure sensing element, a light source supply device and a light sensing device for measuring a gas concentration of a to-be-measured gas (such as ozone). The temperature sensing element and the pressure sensing element respectively measure a temperature and a pressure of the to-be-measured gas. The light source supply device uses UV-LED as an ultraviolet light-emitting source, and provides a first detection light beam and a calibration light beam with different ozone absorbances, and then uses a light beam splitter to split the light beams into a split light that passes through the to-be-measured gas and a split light that does not pass through the to-be-measured gas.

Abstract: Disclosed are a hollow cathode discharge assistant transformer coupled plasma source and an operation method of the same. A reaction chamber with an annular channel is provided, and a ferrite transformer with a first ferrite magnetic core wound with a first coil and a second ferrite magnetic core wound with a second coil and a drive power source is provided. The drive power source applies an AC power supply with a first voltage to the first coil to generate an alternating magnetic field. The second coil generates a second voltage by inducing the alternating magnetic field to excite a working gas in the annular channel into a plasma through a hollow cathode discharge mechanism. The annular channel induces the alternating magnetic field through a transformer coupled plasma mechanism to generate an induced electric field to excite the plasma to form an electric current in the annular channel.

Abstract: A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.

Abstract: A hybrid plasma source and an operation method thereof, the hybrid plasma source is formed by combining the mechanisms of microwave plasma and transformer coupled plasma for gas dissociation and chemical activation. A reaction chamber of the hybrid plasma source is composed of two microwave resonant chambers and sets of hollow metal tubes, after a high-intensity electric field is generated by the microwave resonant chambers to generate a plasma, a high power and high density plasma generated by the highly-efficient coupling mechanism of the transformer coupled plasma is capable of greatly improving a gas conductance, each set of the hollow metal tubes is driven by each set of ferrite transformer magnetic cores to disperse power, which reduces an energy density of each of the hollow metal tubes and reduces occurrence of plasma entering a contraction mode from a diffusion mode, thereby further improving an operable gas flow rate.

Abstract: Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.

Abstract: A fast annealing equipment is applicable to the annealing treatment of silicon carbide wafers. The fast annealing equipment comprises a variable frequency microwave power source system, a resonant chamber heating system and a measurement and control system. The variable frequency microwave power source system uses a solid state power amplifier and has the flexibility of fast frequency sweep during heat treatment to compensate for resonant frequency changes due to load effect caused by temperature changes in a material to be annealed. In order to improve an energy efficiency and provide a sufficient microwave energy uniform area, the TM010 resonant chamber structure can be used to anneal 4-inch to 8-inch silicon carbide wafers. The measurement and control system combines software and hardware to form an automatic system with instant feedback to provide further flexibility, stability and reliability for the entire equipment.

Abstract: A hybrid plasma source and an operation method thereof, the hybrid plasma source is formed by combining the mechanisms of microwave plasma and transformer coupled plasma for gas dissociation and chemical activation. A reaction chamber of the hybrid plasma source is composed of two microwave resonant chambers and sets of hollow metal tubes, after a high-intensity electric field is generated by the microwave resonant chambers to generate a plasma, a high power and high density plasma generated by the highly-efficient coupling mechanism of the transformer coupled plasma is capable of greatly improving a gas conductance, each set of the hollow metal tubes is driven by each set of ferrite transformer magnetic cores to disperse power, which reduces an energy density of each of the hollow metal tubes and reduces occurrence of plasma entering a contraction mode from a diffusion mode, thereby further improving an operable gas flow rate.

Abstract: A non-contact processing device and a non-contact processing method are used to perform a processing procedure on a solid structure. The non-contact processing device of the invention uses an electromagnetic radiation source to provide energy to the solid structure to cause qualitative changes or defects in the solid structure, that is, to form a modified layer. A separation energy source is used to apply a separation energy on the solid structure with the modified layer in a non-contact manner. With stress, structural strength, lattice pattern or hardness of the modified layer being different from that of other non-processing areas, the solid structure can be rapidly separated or thinned at the modified layer.

Abstract: Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.

Abstract: A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.