Abstract: The present invention relates to semiconductor device manufacturing techniques, and specifically to a field of device packaging techniques at wafer level. More specifically, it relates to a cap wafer for wafer bonding application that is bonded to top part of a device wafer. The method of the present invention excludes the use of deep reactive ion etching of silicon to form a through silicon via. The present invention provides a method for the preparation of cap wafer for wafer bonding application with a simple process of through silicon via interconnection and a wafer level packaging method using the same.

Abstract: The present invention relates to an optical transmittance device including an optical fiber having a tilted incident plane and a silicon optical bench (SiOB) with a mirror plane. In accordance with the present invention, there provided an optical device, including: a substrate having a groove with a tilted surface, wherein the groove has a mirror plane on the tilted surface; a light emitting means aligned to the substrate; and an optical fiber including a tilted incident plane, wherein a reflected light from the mirror plane is incident to the tilted incident plane.