Abstract: A photosensitive element includes a semiconductor substrate, a first contact region connected to a first contact, and a second contact region connected to a second contact. The semiconductor substrate has a radiation receiving area through which an incident radiation can enter the photosensitive element and a radiation reflecting area disposed on a side of the semiconductor substrate opposite the radiation receiving area. A multiplication region multiplying a plurality of charges generated from the incident radiation is formed at the first contact region when a voltage is applied between the first contact and the second contact. The first contact and the second contact are arranged on the side of the semiconductor substrate opposite the radiation receiving area.

Abstract: A photosensitive element includes a semiconductor substrate, a light sensitive region formed in the semiconductor substrate, an inactive region at least partly surrounding the light sensitive region, and a protective layer having an opening leaving the light sensitive region uncovered by the protective layer. The protective layer is an anti-reflective coating having in at least a part of a spectral range between 300 nm and 1200 nm a reflectivity of less than 10% and a transmittance of less than 0.1%.

Abstract: A notification sensor arrangement includes a drift pressure sensor measuring a drift signal indicative of a drift of a differential pressure sensor. The drift pressure sensor has a drift sensing unit formed on or in a symmetrical diaphragm, which has an upper side in fluid communication with a first fluid having a first pressure and a lower side in fluid communication with the first fluid having the first pressure. The notification sensor arrangement includes a comparing unit comparing the drift signal with a predefined threshold value to determine if the drift of the differential pressure sensor is a critical drift, a notification unit outputting a warning signal in response to a determination of the critical drift, and a base supporting the drift pressure sensor and the differential pressure sensor.

Abstract: A photosensitive element includes a semiconductor substrate, a light sensitive region formed in the semiconductor substrate, an inactive region at least partly surrounding the light sensitive region, and a protective layer having an opening leaving the light sensitive region uncovered by the protective layer. The protective layer is an anti-reflective coating having in at least a part of a spectral range between 300 nm and 1200 nm a reflectivity of less than 10% and a transmittance of less than 0.1%.

Abstract: An arrangement for an optoelectronic component includes a substrate and an optical semiconductor chip arranged on the substrate. The optical semiconductor chip has an optically active region, a first optically non-active region, and a second optically non-active region. A connection structure connects a chip-side electrical connection to the optically active region. An electrical connection connects the chip-side electrical connection to a second substrate-side electrical connection. A coating is provided in a layer stack in the optically active region, in the first optically non-active region, and in the second optically non-active region. The layer stack includes a first layer and a second layer arranged above the first layer. The chip-side electrical connection and the connection structure in the first optically non-active region and the protective layer in the second optically non-active region are each arranged between the first layer and the second layer.

Abstract: A chip module includes a chip having a front side and a rear side, a chip carrier having an upper side facing the chip, a contact layer formed of an electrically conductive material and arranged on the upper side of the chip carrier between the rear side of the chip and the upper side of the chip carrier, and an electrically conductive adhesive arranged on an upper side of the contact layer facing the chip. The electrically conductive adhesive connects the upper side of the contact layer and the rear side of the chip. The contact layer has a plurality of regions electrically insulated from each other and each electrically connected to the chip by the electrically conductive adhesive.

Abstract: Provided is an arrangement for a semiconductor-based pressure sensor chip including: piezoresistive elements which are formed having an electrically doped channel in a layer arrangement in the region of a pressure membrane of a semiconductor substrate; an electrically conductive cover layer which is formed in the layer arrangement and is electrically insulated from the piezoresistive elements by an insulating layer; a bridge circuit of transistors, each of which are formed having one of the piezoresistive elements, wherein gate electrodes of the transistors are arranged in electrically doped layer regions in the electrically conductive cover layer, said layer regions being formed separately from one another; and a signal feedback, using which an output signal applied to the output of the bridge circuit is fed back in a signal-amplifying manner to one or more of the gate electrodes. Also provided is a pressure sensor chip.

Abstract: An arrangement for an optoelectronic component includes a substrate and an optical semiconductor chip arranged on the substrate. The optical semiconductor chip has an optically active region, a first optically non-active region, and a second optically non-active region. A connection structure connects a chip-side electrical connection to the optically active region. An electrical connection connects the chip-side electrical connection to a second substrate-side electrical connection. A coating is provided in a layer stack in the optically active region, in the first optically non-active region, and in the second optically non-active region. The layer stack includes a first layer and a second layer arranged above the first layer. The chip-side electrical connection and the connection structure in the first optically non-active region and the protective layer in the second optically non-active region are each arranged between the first layer and the second layer.

Abstract: The present disclosure provides thermal gas property sensors and compensated differential pressure sensors, as well as methods for measuring a physical property of a gas and methods for compensating differential pressure sensors. A reference overpressure of a gas is generated in a cavity. Based on the flow of the gas from the cavity through a channel, properties of the gas are identified.

Abstract: A semiconductor structure for a radiation detector, comprising a substrate composed of a semiconductor material of a first conductivity type, a semiconductor substrate, wherein the semiconductor substrate is provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration, a plurality of doped regions, wherein the plurality of doped regions are provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate, at least one further doping region, and a cover layer is provided.

Abstract: Semiconductor photodetectors are provided that may enable optimized usage of an active detector array. The semiconductor photodetectors may have a structure that can be produced and/or configured as simply as possible. A radiation detector system is also provided.

Abstract: There is described herein a method for calibrating gas flowmeters comprising only one calibration procedure performed at the device level. The step of calibrating the differential pressure sensor itself may be omitted, and the design of the sensor may therefore be simplified by eliminating the sensor conditioner and instead using a microcontroller on the device for signal processing. This is done by a two-point calibration procedure with the use of three correction coefficients to compensate for the variability of flow tubes and pressure sensors.

Abstract: A semiconductor structure for a radiation detector, comprising a substrate composed of a semiconductor material of a first conductivity type, a semiconductor substrate, wherein the semiconductor substrate is provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration, a plurality of doped regions, wherein the plurality of doped regions are provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate, at least one further doping region, and a cover layer is provided.

Abstract: A device for measuring acceleration includes a base plate and mass elements connected to the base plate via elastic support elements having measuring points. The support elements of a first and a second mass element are constructed such that the support element of the first and the second mass element have at the measuring points an identical response characteristic for a first acceleration component in a first direction, and mutually different response characteristics for a second acceleration component perpendicular to the first component. The deflection of the measurement points is measured and evaluated. The component in the first and second directions is stepwise eliminated, and the result adjusted for the eliminated component is used for recovering these two components. The result adjusted for the eliminated component is measured as static acceleration and the component acting in the first and the second direction is measured as dynamic acceleration.

Abstract: Semiconductor photodetectors are provided that may enable optimized usage of an active detector array. The semiconductor photodetectors may have a structure that can be produced and/or configured as simply as possible. A radiation detector system is also provided.

Abstract: The invention relates to an arrangement with a medical gamma probe and an optical module arranged on the medical gamma probe, said optical module having a light source which emits light rays during operation and is configured to generate an optical pointer in a detection region of the medial gamma probe using the light rays from the light source.