Patents Assigned to FITRONIC COMPOUND SEMICONDUCTORS LIMITED
  • TRANSISTOR
    Publication number: 20080237643
    Abstract: A heterojunction bipolar transistor comprising a substrate; a collector on the substrate; a base layer on the collector; an emitter layer on the base layer; the emitter layer comprising an upper emitter layer and a lower emitter layer between the upper emitter layer and base; the collector, base and emitter layers being npn or pnp doped respectively; characterised in that the lower emitter layer has a larger bandgap than the base layer and is AlxIn1-xP or GaxAl1-xP, x being in the range 0+ to 1.
    Type: Application
    Filed: March 27, 2008
    Publication date: October 2, 2008
    Applicant: FITRONIC COMPOUND SEMICONDUCTORS LIMITED
    Inventors: Matthew Francis O'Keefe, Robert Grey, Michael Charles Clausen, Richard Alun Davies