Abstract: An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.
Type:
Grant
Filed:
January 17, 2020
Date of Patent:
May 27, 2025
Assignee:
Flexora GmbH
Inventors:
Hans Kleemann, Seongae Park, Jörn Vahland