Patents Assigned to FORCE MOS TECHNOLOGIES CO., LTD.
  • SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS
    Publication number: 20120187477
    Abstract: A super-junction trench MOSFET with split gate electrodes is disclosed for high voltage device by applying multiple trenched source-body contacts with narrow CDs in unit cell.
    Type: Application
    Filed: March 29, 2012
    Publication date: July 26, 2012
    Applicant: FORCE MOS TECHNOLOGIES CO., LTD.
    Inventor: Fu-Yuan HSIEH