Abstract: The invention is directed to a formable homogeneous propellant composition and to a process employing same for production of a self-supporting formed propellant charge. The propellant composition comprises a mixture of propellant grains and solvent-filled microcapsules in proportions suitable for consolidation under pressure to form the self-supporting formed propellant charge. The solvent-filled microcapsules comprise solvent suitable for partially solvating the propellant grains. The mixture of propellant grains and solvent-filled microcapsules are placed in a forming mold under sufficient pressure to rupture at least a substantial portion of the microcapsules. Pressure is maintained for a time sufficient to form the self-supporting formed propellant charge, after which the propellant charge can be removed from the forming mold and cured by exposure to drying heat.

Abstract: A generally planar antenna for generating circularly polarized electromagnetic signals, particularly useful at microwave frequencies. Each antenna element comprises a single excitation aperture (7) cut in a planar conductive ground plane (9). Spaced apart from the ground plane (9) by means of a dielectric layer (11) and covering the excitation aperture (7) is a planar conductive radiating patch (5) having slightly different dimensions along each of two orthogonal axes. The radiating patch (5) may have the shape of a near square or an ellipse. Exciting the aperture (7) with linearly polarized electromagnetic energy causes the radiating patch (5) to generate a circularly polarized electromagnetic signal consisting of two orthogonal components that have substantially the same amplitude and are 90.degree. offset in phase from each other. Several antenna elements can be combined to form a large aperture array.

Abstract: A discarding sabot projectile comprises:a subcaliber projectile;a discarding sabot means for providing a full caliber carrier for the projectile;a discarding sabot base abutting a rearwardly facing surface of the aft end of the projectile, which base is free of direct positive coupling to the projectile;sabot/projectile coupling means for direct connection of the discarding sabot means to the projectile to prevent axially forward displacement of the projectile relative the sabot; andsabot/base coupling means for direct and positive connection of the discarding sabot means to the sabot base, locking the projectile into position within the cavity defined by the discarding sabot means and sabot base.

Abstract: A piezoelectric motor actuated amplifier mechanism that utilizes a pair of saggital linkages having one relatively fixed saggital midpoint and joined at their end points to obtain a doubled amplification factor output from one relatively movable saggital midpoint. Thermal compensators are employed between the piezoelectric actuator and the saggital linkages to stabilize the amplifier throughout a wide range of temperatures.

Abstract: A telescoped ammunition round comprises:a propellant charge having an axial cavity for supplying firing power to the ammunition round;a control tube means housed within the aft end of the axial cavity;a booster charge within the axial bore of the control tube, fireable in response to a primer means of the ammunition round in communication therewith; anda sabot/projectile assembly mounted within the axial cavity, its aft end extending into the control tube, wherein the sabot comprises an integral piston at its aft end to receive propulsive forces upon firing of the booster charge of the ammunition round.

Abstract: A Schottky barrier photodiode for detecting infrared radiation uses implantation of metal ions to form a metal silicide. An annular N+ type silicon guard ring is formed in a p-type silicon substrate. Metal ions are implanted into the exposed surface area of the silicon substrate surrounded by the silicon guard ring. The resulting structure is annealed to form a silicide of the implanted metal. A portion of the silicon substrate encircled by the silicon guard ring and above the metal silicide is removed. A thin oxide passivating layer is formed above the metal silicide.