Abstract: A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer.
Type:
Grant
Filed:
November 21, 2012
Date of Patent:
September 30, 2014
Assignee:
Forschungsvebund Berlin E.V.
Inventors:
Olaf Brox, Frank Bugge, Paul Crump, Goetz Erbert, Andre Maassdorf, Christoph M. Schultz, Hans Wenzel, Markus Weyers