Abstract: A method of producing an ohmic contact to p-type silicon carbide comprising two layers, the first one comprising nickel silicide and the second one comprising titanium carbide is disclosed. The deposited layers are annealed to convert at least a part of deposited metals to nickel silicide and titanium carbide. The contact is formed by reaction between the metals and the semiconductor, and thus the in-situ simultaneous formation of metal silicide and carbide suppress the release of excess carbon at the contact interface. Noble metals may be deposited preferably in between titanium and nickel to improve the contact morphology.