Abstract: An electronic view camera integrates a camera head assembly and laptop computer into a tripod mountable unified structure. The rigid frame, that unifies the camera head and computer, accommodates a choice of laptop type computers from a variety of different manufacturers. The open front, back and side design of the rigid frame permits ready access for electrical connections and for access to removable storage devices, keyboard, and pointing device. The computer LCD acts as a large screen viewfinder for the camera and has the “feel” of a professional type view camera rather than the “feel” of a computer system with a photographic peripheral.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.

Abstract: A method for controlling the exposure of an active pixel array electronic still camera includes the steps of: integrating photocurrent in each pixel during an integration time period; collecting overflow charge from all pixels in the array during the integration time period; developing an overflow signal as a function of the overflow charge; and terminating the integration time period when the overflow signal exceeds a preset threshold level selected to represent a desired reference exposure level.

Abstract: A double-slope MOS active pixel sensor disposed on a semiconductor substrate has a first light-to-output-voltage transfer gain up to a first charge accumulation threshold, has a second light-to-output-voltage transfer gain lower than the first light-to-output-voltage transfer gain above the light accumulation threshold, and comprises first and second photodiodes each having a first terminal coupled to a fixed potential and a second terminal. The second photodiode is smaller than the first photodiode. First and second semiconductor reset switches each have a first terminal coupled respectively to the second terminal of the first and second photodiodes and a second terminal coupled respectively to first and second reset potentials that reverse bias the photodiodes. First and second semiconductor amplifiers each have an input coupled respectively to the second terminals of the first and second photodiodes and have their outputs coupled together.

Abstract: A corrector optic is provided, for use in a camera system that includes a thick prism in front of the focal plane. The corrector optic includes preferably two lenses to be aligned on the optical axis of the camera system. When coupled within the camera system, the corrector optic is disposed between the objective lens and the prism. A preferred corrector optic includes a positive lens having a convex surface facing the objective lens and a negative lens having a concave surface facing the prism, such that the lenses together reduce spherical and coma aberrations caused by imaging through the prism. Chromatic aberration is also reduced by choosing the negative lens material to have a higher index of refraction and higher dispersion than those of the positive lens material.

Abstract: Vertical-color-filter pixel sensors having simplified wiring and reduced transistor counts are disclosed. In an embodiment, a single line is used for reference voltage, pixel reset voltage, and column-output signals in a VCF pixel sensor. In another embodiment, row-reset signals and row-enable signals are sent across a line that is shared between adjacent rows in an array of VCF pixel sensors. The present invention also provides an optimized layout for a VCF pixel sensor with shared row-reset, row-enable, reference voltage and column-output lines as well as a VCF pixel sensor in which source-follower voltage, source-follower amplifier voltage and row-enable signals all share a common line. These combined line embodiments can be used with a single column-output line as well as two row-enable lines. The embodiments can also be implemented in a VCF pixel sensor without a row-enable transistor.

Abstract: An image sensor includes a plurality of active pixel sensors arranged in an array. Each active pixel sensor includes a photosensor that generates a sensor signal nominally indicative of an intensity of light incident on the photosensor and a follower-type amplifier that couples the sensor signal to an output of the active pixel sensor to provide a buffered sensor signal. A column line is provided for each column in the array, and each column line is coupled to the output of the active pixel sensors associated with that column.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, each having a different spectral response. At least one of the sensors includes at least one layer of a semiconductor material other than crystalline silicon (for example, silicon carbide, or InxGa1-xN, or another III-V semiconductor material, or polysilicon, or amorphous silicon). Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof.

Abstract: An array of vertical color filter (VCF) sensor groups, each VCF sensor group including at least two vertically stacked, photosensitive sensors. Preferably, the array is fabricated, or the readout circuitry is configured (or has a state in which it is configured), to combine the outputs of sensors of multiple sensor groups such that the array emulates a conventional array of single-layer sensors arranged in a Bayer pattern or other single-layer sensor pattern, and such that the outputs of at least substantially all of the sensors of each of the VCF sensor groups are utilized to emulate the array of single-layer sensors.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least one sensor of the group has substantially larger area, projected in a plane perpendicular to a normal axis defined by a top surface of a top sensor of the group, than does each minimum-sized carrier-collection element of the group. In some embodiments, the array includes at least two sensor groups that share at least one carrier-collection element. Optionally, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor of the group.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.

Abstract: A vertical color filter sensor group, formed on a substrate (preferably a semiconductor substrate) by a semiconductor integrated circuit fabrication process, and including at least two vertically stacked, photosensitive sensors. Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof. In some embodiments, the sensor group is a block of solid material having a readout surface. At least two vertically stacked sensors are formed in the block and a trench contact is provided between one of the sensors and the readout surface.

Abstract: An integrated active pixel sensor array arranged in a plurality of rows and columns comprises a saturation level line coupled to a source of saturation level control voltage, a global current-summing node.

Abstract: An isolated high voltage p-type DMOS transistor comprises a layer of p-type semiconductor material in which a first n-well is disposed. A first annular p-type region is disposed in the first n-well. A first annular shallow trench isolation region is spaced apart from the first annular p-type region. An annular p-well region is spaced apart from the first shallow trench isolation region. An inner perimeter of the annular p-well region is disposed outside of the first annular p-type region. A second annular p-type region is disposed in the p-well. An annular gate has an inner perimeter aligned with the outer perimeter of the first annular p-type region and an outer perimeter disposed over the first shallow trench isolation region. A second annular n-well region is disposed outside of a second annular shallow trench isolation region. The second annular shallow trench isolation region is disposed outside of the annular p-well region.

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch.

Abstract: A method for storing digital information from an image sensor comprises the steps of providing an image sensor producing three-color output data at each of a plurality of pixel locations; providing a digital storage device coupled to the image sensor; sensing three-color digital output data from the image sensor; and storing said three-color output data as digital data in the digital storage device without performing any interpolation on the three-color output data. The data may be compressed prior to storage and expanded after retrieval from storage. In a preferred embodiment, the image sensor comprises a triple-junction active pixel sensor array.

Abstract: A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with spectral sensitivities that depend on the absorption depth versus wavelength of light in the semiconductor. Alternate layers, preferably the n-type layers, are detector layers to collect photo-generated carriers, while the intervening layers, preferably p-type, are reference layers and are connected in common to a reference potential referred to as ground. Each detector group includes a blue-sensitive detector layer at an n-type layer at the surface of the semiconductor, a green-sensitive detector layer at an n-type layer deeper in the semiconductor, and a red-sensitive detector layer at the n-type layer deepest in the semiconductor.

Abstract: A triple-slope MOS active pixel sensor disposed on a semiconductor substrate comprises first and second capacitive storage elements each having a first terminal connected to a fixed potential and a second terminal. First and second photodiodes each have a first terminal connected to a fixed potential and a second terminal. The second photodiode is smaller than the first photodiode. First and second semiconductor reset switches each have a first terminal connected respectively to the second terminal of the first and second photodiodes and a second terminal connected respectively to first and second reset potentials that reverse bias the photodiodes. First and second semiconductor transfer switches each have a first terminal connected respectively to the second terminals of the first photodiode and a second terminal connected respectively to the second terminals of the first and second capacitive storage elements.

Abstract: Photographic flashes use the major portion of available energy in modern cameras. A series of innovations within a photographic flash system improves the energy efficiency by a factor of 3, and thereby extends battery life. The flash system includes a precise flash-termination circuit, a high-efficiency charging circuit, a low-leakage coupled inductor, and a battery-saving charge-circuit drive. Flash termination is controlled by a majority-carrier switching device. This circuit allows termination of the flash current without the timing uncertainty or parasitic leakage associated with previous designs. Multiple flashes also can be produced by the circuit, which may be interfaced with through-the-lens flash controls. A flyback-converter charging circuit uses a coupled inductor that has an alternately layered winding pattern to lower leakage inductance drastically, and uses appropriately selected wire types to decrease skin-effect resistance losses.

Abstract: An active pixel sensor cell array in which a two-stage amplifier amplifies the output of each cell. The two-stage amplifier design reduces fixed pattern noise in the image data generated by reading the array, by providing increased gain for the output of each cell without impractically increasing the size and complexity of each cell. For each column of cells of the array, one part of the two-stage amplifier for each cell is shared by all cells of the column, and another part of the two-stage amplifier for each cell is included within the cell itself. Preferably, each cell includes only NMOS transistors (no cell includes a PMOS transistor). In preferred embodiments, a differential amplifier within each cell is the primary stage of the cell's output amplifier, PMOS load circuitry including a secondary output amplifier stage is shared by all cells of the column, and the two amplifier stages for each cell together comprise an op amp.