Abstract: An anti-fuse cell includes a standard MOS transistor of an integrated circuit, with source and drain regions covered with a metal silicide layer and at least one track of a resistive layer at least partially surrounding the MOS transistor, and adapted to pass a heating current such that the metal of said metal silicide diffuses across drain and/or source junctions.
Type:
Application
Filed:
December 23, 2005
Publication date:
April 23, 2009
Applicants:
STMicroelectronics Crolles 2 SAS, France and Koninklijke Philips Electronics N.V.