Patents Assigned to France and Koninklijke Philips Electronics N.V.
  • Publication number: 20090102014
    Abstract: An anti-fuse cell includes a standard MOS transistor of an integrated circuit, with source and drain regions covered with a metal silicide layer and at least one track of a resistive layer at least partially surrounding the MOS transistor, and adapted to pass a heating current such that the metal of said metal silicide diffuses across drain and/or source junctions.
    Type: Application
    Filed: December 23, 2005
    Publication date: April 23, 2009
    Applicants: STMicroelectronics Crolles 2 SAS, France and Koninklijke Philips Electronics N.V.
    Inventors: Bertrand Borot, Roberto Maurizio Gonella, Sebastien Fabre