Abstract: Process for preparing granules of oxidic or nonoxidic metal compounds, characterized in that a dispersion which comprises water, oxidic or nonoxidic metal compounds and at least one dispersant is spray-dried,—where the proportion of oxidic or nonoxidic metal compounds is 40 to 70% by weight and the sum of the proportions of water and the particles is at least 70% by weight and—the particles have a BET surface area of 20 to 150 m2/g and a median of the particle size of less than 100 nm,—where the dispersant is present in the dispersion with a proportion of 0.25 to 10% by weight based on the oxidic or nonoxidic metal compounds and—where the spray-drying is performed by atomization with air in the cocurrent principle or fountain principle, and an air inlet temperature of 170 to 300° C. and an air outlet temperature of 90 to 130° C. are selected.

Abstract: The present invention relates to an integrated transceiver structure 1; 20, comprising at least one antenna terminal 2a-2d, a mixer 4 adapted to down-convert signals received via said at least one antenna terminal 2a-2d and to up-convert signals to be transmitted via said antenna terminal 2a-2d, a receiving path 5 adapted to guide signals received via said at least one antenna terminal 2a-2d to said mixer 4, a transmitting path 16 adapted to guide signals to be transmitted from said mixer 4 to said at least one antenna terminal 2a-2d, a first switch 7 adapted to selectively connect said at least one antenna terminal 2a-2d to said receiving path 5 or said transmitting path 16, and a second switch 8 adapted to selectively connect said receiving path 5 or said transmitting path 6 to said mixer 4. The transceiver structure 1; 20 of the invention is advantageously implemented on a single chip and is preferably suitable for millimeter wave wireless applications.

Abstract: The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.

Abstract: The invention relates to a vapor barrier for use in the thermal insulation of buildings which can be used, in particular, for thermal insulation procedures in new buildings or in the renovation of old buildings. The vapor barrier in accordance with the invention is thereby capable of achieving water vapor exchange under different ambient conditions. This is achieved by using a material which has a water vapor diffusion resistance which is dependent on the ambient humidity and which also has adequate tensile strength and tear resistance.

Abstract: The invention relates to a vapor barrier for use in the thermal insulation of buildings which can be used, in particular, for thermal insulation procedures in new buildings or in the renovation of old buildings. The vapor barrier in accordance with the invention is thereby capable of achieving water vapor exchange under different ambient conditions. This is achieved by using a material which has a water vapor diffusion resistance which is dependent on the ambient humidity and which also has adequate tensile strength and tear resistance.

Abstract: The invention relates to a vapor barrier for use in the thermal insulation of buildings which can be used in particular, for thermal insulation procedures in new buildings or in the renovation of old buildings. The vapor barrier in accordance with the invention is thereby capable of achieving water vapor exchange under different ambient conditions. This is achieved by using a material which has a water vapor diffusion resistance which is dependent on the ambient humidity and which also has adequate tensile strength and tear resistance.

Abstract: The invention relates to a vapor barrier for use in the thermal insulation of buildings which can be used, in particular, for thermal insulation procedures in new buildings or in the renovation of old buildings. The vapor barrier in accordance with the invention is thereby capable of achieving water vapor exchange under different ambient conditions. This is achieved by using a material which has a water vapor diffusion resistance which is dependent on the ambient humidity and which also has adequate tensile strength and tear resistance.

Abstract: The invention relates to a vapor barrier for use in the thermal insulation of buildings which can be used, in particular, for thermal insulation procedures in new buildings or in the renovation of old buildings. The vapor barrier in accordance with the invention is thereby capable of achieving water vapor exchange under different ambient conditions. This is achieved by using a material which has a water vapor diffusion resistance which is dependent on the ambient humidity and which also has adequate tensile strength and tear resistance.

Abstract: The invention relates to a vapor barrier for use in the thermal insulation of buildings which can be used, in particular, for thermal insulation procedures in new buildings or in the renovation of old buildings. The vapor barrier in accordance with the invention is thereby capable of achieving water vapor exchange under different ambient conditions. This is achieved by using a material which has a water vapor diffusion resistance which is dependent on the ambient humidity and which also has adequate tensile strength and tear resistance.