Abstract: In a method of connecting a first and a second silicon wafer, the first silicon wafer is first provided with a polyimide layer on a main surface thereof. Subsequently, a plasma-induced reaction between the polyimide layer and water is performed. A plasma-induced reaction is also performed between a main surface of the second silicon wafer and chlorine. The main surface of the second silicon wafer is then subjected to a treatment with hydrolyzed triethoxysilylpropanamine. Following this, the surfaces of the two silicon wafers, which have been subjected to the plasma-induced reactions, are joined together so as connect the silicon wafers permanently.
Type:
Grant
Filed:
November 5, 1999
Date of Patent:
December 11, 2001
Assignee:
Fraunhofer-Gesellschaft zur Foerderungdder Angewandten
Forschung, e.V.