Abstract: A method for forming a semiconductor device and selectively forming a salicide layer is described. In one embodiment, the method includes depositing a metal layer over a semiconductor substrate having a first area and a second area, wherein the first area and the second area include silicon, removing the metal layer over the second gate electrode, and reacting the metal layer with the first area to form a salicide layer over the first area. In one embodiment, the first area and the second area include a first gate electrode and a second gate electrode, respectively.