Abstract: Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.

Abstract: One example includes an atomic sensor system. The system includes an optical source configured to provide an optical beam and a plurality of sensor cell systems. Each of the sensor cell systems includes sensing media enclosed in a volume therein. The system also includes optics configured to provide the optical beam to each of the sensor cell systems to provide interaction of the optical beam with the vapor in each of the respective sensor cell systems. The optical beam exiting each of the sensor cell systems is a respective detection beam. The system further includes a detection system comprising at least one configured to receive the detection beam from each of the sensor cell systems and to determine a measurable parameter based on an optical characteristic associated with the detection beam from each of the sensor cell systems.

Abstract: A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

Abstract: Various designs of optical interconnects and optical links may comprise one or more optically resonant electro-optical modulators used to modulate one or more optical carriers received from one or more lasers using one or more electronic input signals. A wavelength of each laser may be dynamically tuned using a control signal generated by a feedback control system to stabilize the electro-optical modulation of the optical carriers.

Abstract: Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.

Abstract: A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

Abstract: An optical system comprising an optoelectronic device having a facet and a coating on the facet. The facet is configured to be in optical communication with at least a first optical medium during a first time period and a second optical medium during a second time period. The first optical medium has a first refractive index and the second optical medium has a second refractive index different from the first refractive index. The coating is configured to provide a first reflectance during the first time period for optical signals in a predetermined wavelength range and to provide a second reflectance during the second time period for optical signals in the predetermined wavelength range wherein the second reflectance is equal to the first reflectance within a negligible margin for optical signals having at least one wavelength in the predetermined wavelength range.

Abstract: An optical apparatus comprising at least two optoelectronic devices fabricated on the same substrate and in thermal communication with each other. A first optoelectronic device is configured to generate optical signals and provide them to an optical system via an optical output port. A second optoelectronic device is configured to provide heat compensation for the first optoelectronic device. An electrical circuitry provides first electrical signals to the first optoelectronic device and second electrical signals to the second optoelectronic device. The electrical circuitry is configured to adjust at least the second electrical signals to controllably adjust a temperature of the first optoelectronic device.

Abstract: A laser including a grating configured to reduce lasing threshold for a selected vertically confined mode as compared to other vertically confined modes.

Abstract: Devices configured to determine wavelength of light, monitoring wavelength or provide a reference wavelength are disclosed. The devices can comprise a plurality of etalons. The plurality of peaks in the transmission or reflection spectrum of different etalons of the plurality of etalons can be phase shifted with respect to each other in wavelength space. The plurality of etalons can comprise materials with different group index of refraction or materials with different thermal responses. Phase shift of the plurality of peaks in the transmission or reflection spectrum of different etalons in wavelength space can be accomplished by changing the relative temperature between the different etalons.

Abstract: A tunable wavelength laser comprising a laser cavity formed by a broadband mirror and a comb mirror. The laser cavity comprising a gain region. The laser cavity is configured such that a non-integer number of cavity modes of the laser cavity are between two consecutive reflection peaks of the comb mirror.

Abstract: An optical device is provided that includes a waveguide layer and at least one grating structure. A coupling coefficient of the at least one grating structure to a fundamental optical mode supported by the waveguide layer is greater than a coupling coefficient of the at least one grating structure to at least one higher order transverse optical mode supported by the waveguide layer.

Abstract: A laser comprising a laser cavity formed by a broadband mirror and a comb mirror having a plurality of reflection peaks. A spacing between the plurality of reflection peaks is adjusted such that only one reflection peak is in a gain bandwidth of the laser.

Abstract: A tunable wavelength laser comprising a laser cavity formed by a broadband mirror and a comb mirror. The laser cavity comprising a gain region. The laser cavity is configured such that a non-integer number of cavity modes of the laser cavity are between two consecutive reflection peaks of the comb mirror.

Abstract: A monolithic integrated optical transmitter comprising (a) an optical source including two output optical paths and (b) a modulator section that includes an interferometric optical signal combiner is described. Each of the two output optical paths of the optical source includes a reflector. The optical source is configured to output a first light beam through the first optical path and a second light beam through the second optical path. The optical transmitter is capable of generating advanced modulation format signals based on amplitude and phase modulation.

Abstract: In various embodiments, a monolithic integrated transmitter, comprising an on-chip laser source and a modulator structure capable of generating advanced modulation format signals based on amplitude and phase modulation are described.

Abstract: A monolithic integrated optical transmitter comprising (a) an optical source including two output optical paths and (b) a modulator section that includes an interferometric optical signal combiner is described. Each of the two output optical paths of the optical source includes a reflector. The optical source is configured to output a first light beam through the first optical path and a second light beam through the second optical path. The optical transmitter is capable of generating advanced modulation format signals based on amplitude and phase modulation.

Abstract: In various embodiments, a monolithic integrated transmitter, comprising an on-chip laser source and a modulator structure capable of generating advanced modulation format signals based on amplitude and phase modulation are described.

Abstract: Various embodiments of a coherent receiver including a widely tunable local oscillator laser are described herein. In some embodiments, the coherent receiver can be integrated with waveguides, optical splitters and detectors to form a monolithic optical hetero/homodyne receiver. In some embodiments, the coherent receiver can demodulate the full phase information in two polarizations of a received optical signal over a range of optical wavelengths.

Abstract: In various embodiments, a monolithic integrated transmitter, comprising an on-chip laser source and a modulator structure capable of generating advanced modulation format signals based on amplitude and phase modulation are described.