Abstract: Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.