Patents Assigned to Freescale Semiconductor, Imc.
  • Publication number: 20120185730
    Abstract: A distributed debug system including processing elements connected to perform a plurality of processing functions on a received data unit, a debug trap unit, a debug trace dump logic unit, and a debug initiator unit is provided. At least two of the processing elements include a debug trap unit that has a first debug enable input and output, and a first debug thread. The first debug thread holds at least a first debug trap circuit having a match signal output connected to the first debug enable output. The first debug trap circuit filters a part of the data unit, compares a filtering result with a debug value, and provides a match signal to the match signal output. The debug trace dump logic unit dumps debug trace data to a buffer associated with the data unit on reception of a match event.
    Type: Application
    Filed: September 30, 2009
    Publication date: July 19, 2012
    Applicant: Freescale Semiconductor, Imc.
    Inventors: Gil Moran, Evgeni Ginzburg, Adi Katz, Erez Shaizaf
  • Publication number: 20120032720
    Abstract: A device that includes a dual edge triggered flip-flop that has state retention capabilities, the dual edge triggered flip-flop includes: a retention latch that includes a first inverter, a second inverter and a first transfer gate; wherein the first and second inverters receive power during a power gating period; a second latch that includes a third inverter, a fourth inverter and a second transfer gate; wherein the third and fourth inverters are powered down during a power gating period; a third transfer gate that is coupled between input nodes of the retention latch and the second latch; wherein the third transfer gate is opened during the power gating period; wherein the first transfer gate is controlled by a control signal and the second transfer gate is controlled by an inverted control signal; wherein the retention latch stores, at the end of the power gating period a retention value; wherein the retention value is selected, in response to a value of the control signal when the power gating period star
    Type: Application
    Filed: May 14, 2009
    Publication date: February 9, 2012
    Applicant: Freescale Semiconductor, Imc.
    Inventor: SERGEY SOFER