Abstract: A module has a substrate, first and second integrated circuits, and a heat sink. The integrated circuits each have a first major surface, a second major surface, a first edge, a second edge, and a third edge and have optical circuits having ports on the first edge and electronic circuits having ports on the second edge. The second edges are connected to the substrate. The first major surface of the second integrated circuit is parallel with the second major surface of the first integrated circuit. The heat sink has a backplane adjacent to the third edge, a first portion along the first major surface of the first integrated circuit, a second portion along the second major surface of the second integrated circuit extending from the backplane, and an insert between the first major surface of the second integrated circuit and the second major surface of the first integrated circuit.

Abstract: An implant is performed in the P channel regions, while masking the N channel regions, to deeply amorphize a layer at the surface of a semiconductor layer. After this amphorization step, germanium is implanted into the amorphized layer. The germanium is implanted to a depth that is less than the amorphization depth. This germanium-doped layer that is amorphous is heated so that it is recrystallized. The recrystallization results in a semiconductor layer that is silicon germanium (SiGe) and compressive. P channel transistors are then formed in this recrystallized semiconductor layer. This process can also be applied to the N channel side while masking the P channel side. In such case the implant would preferably be carbon instead of germanium.