Patents Assigned to Freescales Semiconductor, Inc.
  • Publication number: 20080171285
    Abstract: In an immersion lithography method, the photoresist layer is provided with a shield layer to protect it from degradation caused by contact with the immersion liquid. The shield layer is transparent at the exposure wavelength and is substantially impervious to the immersion liquid. The shield layer can be formed of a material which can be removed using the same developer as is used to develop the photoresist layer after exposure.
    Type: Application
    Filed: February 15, 2005
    Publication date: July 17, 2008
    Applicant: Freescales Semiconductor, Inc.
    Inventors: Kyle Patterson, Kirk Strozewski