Abstract: A system includes an analog-to-digital converter (ADC) for converting an analog input signal to a digital signal output and a nonlinearity corrector for correcting nonlinear error in the digital signal output to produce a corrected digital signal output. A source of the nonlinear error is associated with the ADC, wherein an analog calibration signal is introduced to the source of the nonlinear error during conversion of the analog calibration signal to a digital calibration output having the nonlinear error. After conversion of the analog calibration signal to the digital calibration output, a calibration circuit calculates expected values of correlation sums in response to the digital calibration output and determines correction coefficients using the expected values of the correlation sums. The calibration circuit provides correction data based upon the correction coefficients to the nonlinearity corrector.

Abstract: Methods for forming semiconductor structures are provided for a semiconductor device employing a superjunction structure and overlying trench with embedded control gate. An embodiment comprises forming interleaved first and second spaced-apart regions of first and second semiconductor materials of different conductivity type and different mobilities so that the second semiconductor material has a higher mobility for the same carrier type than the first semiconductor material, and providing an overlying third semiconductor material in which a trench is formed with sidewalls having thereon a fourth semiconductor material that has a higher mobility than the third material, adapted to carry current between source regions, through the fourth semiconductor material in the trench and the second semiconductor material in the device drift space to the drain.