Patents Assigned to French Company
  • Patent number: 9220374
    Abstract: A removable holding device for manipulating a cooking utensils has a shell having an internal cavity that opens laterally on a front face thereof via an oblong orifice. The internal cavity is adapted to receive a lug of the cooking utensil when the lug is inserted through the oblong orifice. A locking mechanism is received within a clearance chamber in the shell that is at least partially closed. The locking mechanism cooperates with an opening in the lug when the lug is received in the internal cavity. The shell is a single piece.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: December 29, 2015
    Assignee: CRISTEL (A FRENCH COMPANY)
    Inventors: Paul Dodane, Pascal Drouville
  • Patent number: 8869650
    Abstract: A variable position flywheel lock for a rotating engine shaft terminating in a flywheel having plurality of radially spaced slots around the circumference. The flywheel lock includes an elongated base positioned perpendicular to a radius of the flywheel. A body is engaged with the base and is movable vertically toward or away from the base. A top is engaged with the body with the top movable parallel to the base. A toothed device extends from the top and is engageable with the radially spaced slots in the flywheel to hold the flywheel in a desired position and lock it in place.
    Type: Grant
    Filed: March 21, 2007
    Date of Patent: October 28, 2014
    Assignee: Reynolds French & Company
    Inventors: David Martin Harris, Russell Dale Watkins
  • Publication number: 20140157548
    Abstract: A removable holding device for manipulating cooking utensils has at least one holding lug in which is provided an opening substantially parallel to an internal edge of said lug, the device including a shell comprising an internal cavity that opens laterally onto a front face of the shell via an oblong orifice, said internal cavity being adapted to receive the lug when the lug is inserted via the oblong orifice, the holding device also comprising locking means received inside a clearance chamber provided in the shell and at least partially dosed at the top, the locking means being adapted to cooperate with the opening in the lug hen said lug is received in the internal cavity. The shell is in one piece. Thus the number of parts necessary for producing the device is particularly small and the production of the device on an industrial scale is greatly facilitated.
    Type: Application
    Filed: January 19, 2012
    Publication date: June 12, 2014
    Applicant: CRISTEL (A French Company)
    Inventors: Paul Dodane, Drouville Pascal
  • Publication number: 20070243223
    Abstract: The present invention relates to a hygienic and/or cosmetic and/or disinfectant composition including, at least one repulsive and/or repellent vermin-killer agent. According to the invention, the repulsive and/or repellent agent is a fatty acid. The present invention also relates to the use of the composition as a vermin-killer and/or repulsive and/or repellent treatment composition for arthropods, in particular insects such as flies, when treating and/or washing the udders and/or the dug of mammals.
    Type: Application
    Filed: March 28, 2007
    Publication date: October 18, 2007
    Applicant: CID LINES N.V., A French company
    Inventors: Richard ALASRI, Woeter Goethals
  • Publication number: 20060231203
    Abstract: Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface in a first support to define a useful layer; and forming a peripheral recess on the first support below the interface so that the periphery of the interface is exposed to facilitate removal and transfer of the useful layer. An epitaxial layer can be formed on the useful layer after forming the recess, with the width and depth of the recess being sufficient to accommodate the volume of residual material resulting from formation of the epitaxial layer without covering the periphery of the interface. Alternatively, an epitaxial layer can be formed on the useful layer after forming the recess, wherein the peripheral recess is configured for receiving sufficient residual material from the epitaxial layer to prevent bonding between the residual material and the useful layer.
    Type: Application
    Filed: May 22, 2006
    Publication date: October 19, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventors: Fabrice Letertre, Olivier Rayssac
  • Publication number: 20060204230
    Abstract: The invention relates to a device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone, characterized in that during annealing, the device applies (1) a basic thermal budget to the wafer, with the basic thermal budget being slightly inferior to the budget necessary to detach the layer, this budget being distributed in an even manner over the weakened zone; and (2) an additional thermal budget is also applied to the wafer locally in a set region of the weakened zone so as to initiate the detachment of the layer in this region.
    Type: Application
    Filed: May 16, 2006
    Publication date: September 14, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventors: Walter Schwarzenbach, Jean-Marc Waechter
  • Publication number: 20060192269
    Abstract: A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of the substrates or separation of one substrate from the other.
    Type: Application
    Filed: April 27, 2006
    Publication date: August 31, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French Company
    Inventors: Fabrice Letertre, Bruno Ghyselen, Olivier Rayssac
  • Publication number: 20060189095
    Abstract: Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
    Type: Application
    Filed: April 12, 2006
    Publication date: August 24, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventors: Bruno Ghyselen, Fabrice Letertre
  • Publication number: 20060186397
    Abstract: A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
    Type: Application
    Filed: April 12, 2006
    Publication date: August 24, 2006
    Applicant: S.O.I. Tec Silicon on Insulator Technologies S.A., A French company
    Inventors: Bruno Ghyselen, Fabrice Letertre
  • Publication number: 20060138189
    Abstract: The invention relates to a method of splitting apart a substrate of two adjoining wafers defining between them a cleavage plane, by bringing each substrate into a substrate-receiving space; and clamping first and second jaw portions onto each substrate in such a manner as to hold each substrate and urge apart the two wafers of each substrate by co-operation between the shapes of housings in first and second portions of the two jaws, respectively. The invention also relates to a splitting method that includes bringing each substrate into a substrate-reception space; clamping together separator portions onto each substrate so as to split apart the two wafers of each substrate; and clamping the split-apart substrate wafers so as to hold the wafers together. An automated system for processing multiple substrates is also provided.
    Type: Application
    Filed: January 24, 2006
    Publication date: June 29, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventors: Thierry Barge, Walter Schwarzenbach, Jean-Marc Waechter, Thuan Truong, Bruno Ghyselen
  • Publication number: 20060124584
    Abstract: A composite structure in accordance with the invention includes front faces of first and second substrates that are molecularly bonded to each other, wherein the dimensions of the second substrate outline are larger than the first substrate outline. The front faces are molecularly bonded such that the outline of the first front face is disposed at least partially within the outline of the second front face. A peripheral ring extends around the first front face and facing the first substrate, in which bonding between the front faces is weak or absent, and has a maximum width of less than about 0.5 mm.
    Type: Application
    Filed: February 7, 2006
    Publication date: June 15, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventor: Christophe Maleville
  • Publication number: 20060086949
    Abstract: A semiconductor structure includes a substrate having a surface and being made of a material that provides atypical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides atypical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The atypical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.
    Type: Application
    Filed: December 13, 2005
    Publication date: April 27, 2006
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventors: Olivier Rayssac, Muriel Martinez, Sephorah Bisson, Lionel Portigliatti
  • Publication number: 20060051944
    Abstract: A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.
    Type: Application
    Filed: October 31, 2005
    Publication date: March 9, 2006
    Applicant: S.O.I. Tec Silicon on Insulator Technologies S.A., a French company
    Inventors: Bruno Ghyselen, Takeshi Akatsu
  • Publication number: 20050227456
    Abstract: An apparatus for cutting at least one thin layer from a substrate or ingot forming element for an electronic or optoelectronic or optical component or sensor. This apparatus includes a device for directing a pulse of energy into the substrate or forming element wherein the pulse has a duration shorter than or of the same order as that needed by a sound wave to pass through the thickness of the weakened zone, and the energy of the pulse is sufficient to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein. The apparatus also includes an assembly for holding or orienting the substrate or ingot forming element so that the energy pulse is completely uniformly directed over the entire surface, through the face and into the substrate or ingot forming element to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein.
    Type: Application
    Filed: June 1, 2005
    Publication date: October 13, 2005
    Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
    Inventor: Michel Roche
  • Publication number: 20050151155
    Abstract: Techniques are shown in which substrates having a first layer of a first material and second layer of a second material, wherein the second material is less noble than the first material, is provided by bonding the first and second layers together with an amorphous layer interposed there between. The amorphous material may be deposited on a bonding face of the first layer, second layer, or both, before the operation of bonding the first and second layers. The layer with less noble material may be a supporting layer and the other layer may be an active layer for forming components in optics, electronics, or opto-electronics. The amorphous layer may be polished before the bonding operation.
    Type: Application
    Filed: February 15, 2005
    Publication date: July 14, 2005
    Applicant: S.O.I. Tec Silicon on Insulator Technologies, a French company
    Inventor: Andre Auberton-Herve
  • Patent number: 5099989
    Abstract: A clothes hanger (7) mounting apparatus (6) has a housing (12) with a top wall (14), back wall (16) and bottom wall (18) with partial side walls (54, 56) on the upper surfaces of which are secured resilient cushions (66). A cover plate (30) is swingable about the top wall to move a bail (80) with a pair of platens (82, 84) into clamping relationship with the cushions and retain clothes hangers located therebetween.
    Type: Grant
    Filed: February 19, 1991
    Date of Patent: March 31, 1992
    Assignee: French Company
    Inventors: John W. Goodin, Tim Payne
  • Patent number: 4118518
    Abstract: The ingredients of the concentrated sauce are heated and blended to form a fluid or pumpable mixture, which is pumped to a heat exchanger or cooler-mixer, where it resides for from 5 to 10 minutes. The somewhat cooled mixtue then passes through an extruder which forms it into solid 1 .times. 1 inch strips. These strips are then severed into approximately 1 .times. 1 inch .times. 3 inch chunks or bars, which are then packaged for marketing. Nitrogen gas, or the like, is pumped into the fluid concentrate before it enters the heat exchanger, and by controlling the rate of flow of the concentrate the gas is allowed to expand to several times its original volume as the mixture leaves the extruder, thereby unexpectedly increasing the uniformity of the final product.
    Type: Grant
    Filed: April 27, 1977
    Date of Patent: October 3, 1978
    Assignee: The R.T. French Company
    Inventor: E. Firth Perryman
  • Patent number: 4018898
    Abstract: Potato granules are added in breadmaking with the surprising, unexpected results of reduction in mixing requirements, a higher level of water absorption, and increased retention of bread softness which means increased shelf life. Preferably the potato granules are added in an amount of 2 lbs. per 100 lbs. of flour. It has been found that the mixing speed of the dough can be decreased 20 RPM for each one percent of potato granules added, despite the increased water absorption which results from the addition of the potato granules. At the same time the increased absorption increases the yield of bread; and the bread remains soft even after 72 hours.
    Type: Grant
    Filed: August 4, 1975
    Date of Patent: April 19, 1977
    Assignee: R. T. French Company
    Inventors: Charles I. Tollefson, Simon S. Jackel, Jack K. Krum
  • Patent number: D656933
    Type: Grant
    Filed: July 6, 2010
    Date of Patent: April 3, 2012
    Assignee: PSB Investissement (A French Company)
    Inventors: Philippe Samuel, Gilles Pierson
  • Patent number: D666615
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: September 4, 2012
    Assignee: PSB Investissement (A French Company)
    Inventors: Philippe Samuel, Gilles Pierson