Patents Assigned to FTNI Inc.
  • Patent number: 7692157
    Abstract: An x-ray image detector suitable for radiology has an active matrix substrate with scanning and read-out circuits. Over this active matrix substrate, which can be a two dimensional array of TFTs associated with a storage capacitance, there is deposited a photoreceptor made of a thin layer of amorphous selenium based multilayer structure. The photoreceptor is covered with a light-transparent electrode on top of which there is provided a scintillator. The indices of refraction of the scintillator and of the selenium based multilayer may be matched with the use of the biasing electrode.
    Type: Grant
    Filed: October 4, 2005
    Date of Patent: April 6, 2010
    Assignee: FTNI Inc.
    Inventors: Henri M. Rougeot, Alain Jean, Habib Mani, Ziad Aziz Shukri
  • Patent number: 6982425
    Abstract: An x-ray image detector suitable for radiology has an active matrix substrate with scanning and read-out circuits. Over this active matrix substrate, which can be a two dimensional array of TFTs associated with a storage capacitance, there is deposited a photoreceptor made of a thin layer of amorphous selenium based multilayer structure. The photoreceptor is covered with a light-transparent electrode on top of which there is provided a scintillator. The indices of refraction of the scintillator and of the selenium based multilayer may be matched with the use of the biasing electrode.
    Type: Grant
    Filed: June 17, 1999
    Date of Patent: January 3, 2006
    Assignee: FTNI Inc.
    Inventors: Henri M. Rougeot, Alain Jean, Habib Mani, Ziad Aziz Shukri
  • Patent number: 6723995
    Abstract: The invention provides a direct conversion flat panel X-ray detector with automatic cancellation of ghost images due to charge trapping. The detector includes a direct X-ray to charge converter, a readout thin film transistor array supported by a glass substrate and on the rear side of the glass substrate, a layer of luminophor which automatically and instantly suppresses the ghosting effect.
    Type: Grant
    Filed: December 7, 2001
    Date of Patent: April 20, 2004
    Assignee: FTNI Inc.
    Inventor: Henri Rougeot
  • Patent number: 6353229
    Abstract: A direct conversion digital x-ray detector is provided with inherent high voltage protection for static and dynamic imaging. The detector has an n-channel active matrix TFT array, a coplanar photoconductor structure and a high voltage biasing electrode. In order to achieve high voltage protection, the biasing electrode is set to a negative potential and the TFT “off” gate voltage is set to a predetermined negative value, such that the TFT is essentially non-conductive.
    Type: Grant
    Filed: June 29, 1999
    Date of Patent: March 5, 2002
    Assignee: FTNI Inc.
    Inventors: Bradley Trent Polischuk, Philippe Leblanc, Martin Choquette, Ziad Aziz Shukri, Henri M. Rougeot
  • Patent number: 6171643
    Abstract: A method for producing a multilayer plate for X-ray imaging is disclosed. As the first step in the method, there is provided a plate of a substrate. Then, there is deposited on this substrate a thin film of amorphous arsenic triselenide by thermal evaporation under reduced pressure, followed by condensation on the substrate. A thick photoconductive film of doped amorphous selenium is then deposited by evaporation and condensation on the thin layer of amorphous arsenic triselenide. This thick photoconductive film can also be deposited directly onto the substrate. Then, a thin film of alkali doped selenium is deposited onto the thick photoconductive layer by evaporation or co-evaporation and condensation, and a conducting biasing electrode is formed on top of this alkali doped film.
    Type: Grant
    Filed: November 20, 1998
    Date of Patent: January 9, 2001
    Assignee: FTNI Inc.
    Inventors: Bradley Trent Polischuk, Alain Jean
  • Patent number: 5880472
    Abstract: A multilayer plate for X-ray imaging is provided, which includes a substrate, a biasing electrode and a selenium-based membrane sandwiched between the substrate and the biasing electrode. The selenium-based membrane comprises a thick photoconductive layer of doped amorphous selenium and one or two thin buffer layers. One of the buffer layers is an amorphous arsenic triselenide layer positioned between the photoconductive layer and the substrate, and the other buffer layer is a unipolar conducting layer of alkali doped selenium positioned between the photoconductive layer and the biasing electrode. Preferably both layers are included. A method of producing such multilayer plates is also disclosed.
    Type: Grant
    Filed: March 28, 1997
    Date of Patent: March 9, 1999
    Assignee: FTNI Inc.
    Inventors: Bradley Trent Polischuk, Alain Jean