Abstract: Provided is a facing-targets sputtering apparatus which attains a target unit of large effective length without employment of an elongated target, and enables a film to be formed on a substrate of large area.

Abstract: Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer.

Abstract: Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.

Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fi

Abstract: Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer.

Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fi

Abstract: Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.