Abstract: A biphenyl-containing diarylpyrimido compound of formula (I), which is prepared by reacting a 4-chloropyrimidine derivative with a biphenyl derivative in a solvent in the presence of a base. A pharmaceutically-acceptable salt of the compound (I) and a pharmaceutical composition containing the compound (I) or a pharmaceutically-acceptable salt thereof are also provided.

Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Abstract: The invention relates to a gate stack structure suitable for use in a semiconductor flash memory device and its fabricating method. The gate stack structure is fabricated on a p-type 100 silicon substrate, which also includes the following components in sequence from bottom to top: a charge tunnel layer of Al2O3 film, the first charge trapping layer of RuOx nanocrystals; the second charge trapping layer of high-k HxAlyOz film, a charge blocking layer of Al2O3 film, and a top electrode. In this invention, the RuOx nanocrystals have excellent thermal stability, and do not diffuse easily at high temperatures. The high-k HfxAlyOz film has high density charge traps.Pd with a high work function is used as the top electrode. Therefore, the present gate stack structure has vast practical prospects for nanocrystal memory devices.