Abstract: An A-D converter utilizing V-F conversion is realized that is capable of performing A-D conversion with high precision without increasing conversion frequency. Two VCOs are provided to find a V-F conversion value that is less than a period of the main VCO by making use of a period difference between the two VCOs. By counting the number of pulses in a pulse signal that is output from a BASE-VCO with a counter, a high order bit of a digital signal is generated. A low order bit, on the other hand, is generated by calculating, for each sampling period, a phase difference from the beginning of a sampling period until a first pulse generation in the sampling period for the output of the BASE-VCO by a third register and second and third subtracters, based on the number of pulses in the output of the BASE-VCO contained in a period from a current activation time point of sampling signal Ps to a time point at which phases of outputs of the BASE-VCO and JAW-VCO match.

Abstract: An A-D converter utilizing V-F conversion is realized that is capable of performing A-D conversion with high precision without increasing conversion frequency. Two VCOs are provided to find a V-F conversion value that is less than a period of the main VCO by making use of a period difference between the two VCOs. By counting the number of pulses in a pulse signal that is output from a BASE-VCO with a counter, a high order bit of a digital signal is generated. A low order bit, on the other hand, is generated by calculating, for each sampling period, a phase difference from the beginning of a sampling period until a first pulse generation in the sampling period for the output of the BASE-VCO by a third register and second and third subtracters, based on the number of pulses in the output of the BASE-VCO contained in a period from a current activation time point of sampling signal Ps to a time point at which phases of outputs of the BASE-VCO and JAW-VCO match.

Abstract: A mask ROM is employed for a semiconductor memory. The mask ROM records information in the stage of manufacturing so that the information cannot be thereafter rewritten. However, the manufacturing cost therefor can be reduced as compared with a nonvolatile memory such as an EEPROM, and it is optimal for recording contents requiring no rewriting. Thus, a card-type recording medium employing a semiconductor memory recording contents requiring no rewriting, which is at a lower manufacturing cost as compared with a nonvolatile memory such as an EEPROM, is provided.