Abstract: A switching control circuit for a power supply circuit including first and second inductors, and first and second transistors controlling first and second inductor currents flowing through the first and second inductors, respectively. The switching control circuit includes: a detection circuit detecting a switching period of the first transistor and a time difference between first and second timings, at which the first and second inductor currents respectively reach first and second predetermined values; an error output circuit outputting an error between a predetermined ratio and a ratio of the time difference to the switching period; and a driving signal output circuit configured to output a driving signal to turn on the second transistor, after the second inductor current reaches the second predetermined value, and to turn off the second transistor, in response to a second time period according to the first time period and the error having elapsed.

Abstract: A semiconductor device having an active portion and a gate pad portion on a semiconductor substrate includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type. The active portion has: first semiconductor regions of the first conductivity type; a first electrode provided on the first semiconductor regions; and first trenches. The gate pad portion has: a gate electrode pad provided above the second semiconductor layer; second trenches provided beneath the gate electrode pad; and second semiconductor regions of the second conductivity type, each provided in the first semiconductor layer so as to be in contact with a respective one of bottoms of the second trenches. Each of the second trenches is continuous with a respective one of the first trenches. The second semiconductor layer is continuous from the active portion to the gate pad portion.

Abstract: A semiconductor module includes a lead including a first bonding portion and a coupling portion extending in a Y direction from the first bonding portion. The first bonding portion has a first width end, and a second width end connected to the coupling portion. The lead has first and second length sides opposite to each other in an X direction. The lead has in the X direction first and second widths at first and second positions, and the second position is away from the first position in the Y direction. In the plan view, the lead has a shape in which the first width is greater than the second width such that positions of the first and second length sides at the second position are respectively located inward in the X direction with respect to positions of the first and second length sides at the first position.

Abstract: A semiconductor device, including: a power semiconductor element having a current output electrode; a wire bonded to the current output electrode; and a degradation detection circuit configured to monitor a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to satisfaction of a plurality of conditions including that the power semiconductor element is in a turn-off state, and that a temperature of the power semiconductor element is within a predetermined temperature range.

Abstract: A testing apparatus, including: a variable resistor coupled to a control electrode of a switching device; a storage circuit storing information indicating a relation between a resistance value of the variable resistor and a voltage change rate at which a voltage between power-source-side and ground-side electrodes of the switching device changes when the switching device is turned off; and a control circuit controlling the variable resistor. The control circuit sets the variable resistor to have a first resistance value and obtains a first value of the voltage change rate, sets the variable resistor to have a second resistance value based on the first value of the voltage change rate and the information, obtains a second value of the voltage change rate when the variable resistor is of the second resistance value, and determines whether the second value of the voltage change rate meets a specification of the switching device.

Abstract: The present invention is directed to provide a semiconductor module capable of achieving miniaturization and reduced manufacturing cost while suppressing surge voltage generated when switching the semiconductor elements. A semiconductor module includes a negative terminal and a positive terminal. The negative terminal has a negative fastening portion for fastening a negative polarity-side external terminal, a negative connection portion connected to a laminated substrate, and a negative intermediate portion arranged between the negative fastening portion and the negative connection portion. The positive terminal has a positive fastening portion for fastening a positive polarity-side external terminal, positive connection portions connected to the laminated substrate, and a positive intermediate portion facing the negative intermediate portion with a predetermined gap and arranged between the positive fastening portion and the positive connection portions.

Abstract: A semiconductor module, including a metal-oxide-semiconductor field effect transistor (MOSFET) made of a SiC semiconductor material, and an insulated gate bipolar transistor (IGBT) that is made of a Si semiconductor material and is connected in parallel with the MOSFET. The MOSFET having a body diode. The IGBT is a reverse conductive-IGBT (RC-IGBT), and includes a free wheeling diode. A forward voltage of the free wheeling diode is so set that a current in the body diode of the MOSFET, which is connected in parallel with the RC-IGBT, is equal to or below a current value that causes lattice defects to grow in the MOSFET.

Abstract: There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.

Abstract: A semiconductor module, including: a first circuit board and a second circuit board respectively have a first switching element and a second switching element located thereon, each of the first and second switching elements having an emitter electrode; a first connecting portion and a second connecting portion respectively electrically connected to the emitter electrodes of the first and second switching elements over the first and second circuit boards; an auxiliary emitter terminal; and an auxiliary emitter wiring electrically connected to the auxiliary emitter terminal. The auxiliary emitter wiring includes: a branch point, a common wiring portion which connects the auxiliary emitter terminal and the branch point, and a first discrete wiring portion and a second discrete wiring portion which connect the branch point respectively to the first and second connecting portions, and which each have an inductance smaller than 10 percent of an inductance of the common wiring portion.

Abstract: A semiconductor module includes a circuit board having a semiconductor element mounted thereon, a lead including a first bonding portion bonded to the semiconductor element via a bonding material and a wiring portion connected to the first bonding portion, and a sealing material that seals the semiconductor element and the lead. The first bonding portion has first and second side surfaces that face each other. The wiring portion has a bent portion connected to the first bonding portion at a side of the first bonding portion at which the first side surface is located. The bent portion is bent at a border between the first bonding portion and the bent portion in a direction away from a lower surface of the first bonding portion. The border is located between the first and second side surfaces of the first bonding portion in a plan view of the lead.

Abstract: A control circuit for a circuit that has a rectifier circuit including first to fourth diodes, and first to fourth switches respectively connected in parallel with the first to fourth diodes, for rectifying an AC voltage; and a capacitor receiving the rectified AC voltage. The control circuit controls the first to fourth switches, and includes: a determination unit determining an off-period in which, when the AC voltage is applied, the first to fourth diodes turn off, the off-period including a first period and a second period, in which the first and fourth diodes, and the second and third diodes, respectively turn off; and a control unit turning on the first and fourth switches in the first period, when the second and third diodes are off, and turning on the second and third switches in the second period, when the first and fourth diodes are off.

Abstract: A semiconductor device includes: a semiconductor base body of a first conductivity-type; a first well region of a second conductivity-type provided in the semiconductor base body; at least one second well region of the first conductivity-type implementing a part of a high-side circuit provided in the first well region; a buried layer of the second conductivity-type provided at a bottom of the first well region and having a higher impurity concentration than the first well region; a voltage blocking region of the second conductivity-type provided at a circumference of the first well region; and an extraction region of the first conductivity-type provided to have a greater depth than the second well region at least at a part of a circumference of the high-side circuit in the first well region so as to be opposed to the second well region.

Abstract: A semiconductor module 1 includes an IGBT 31z configured to supply a motor 24 with power, a pre-driver 41z configured to drive the IGBT 31z, a protection unit 42z configured to execute first protection operation protecting the IGBT 31z and the pre-driver 41z from operation in an abnormal state, an IGBT 31db configured to adjust the magnitude of voltage input to the IGBT 31z, a pre-driver 41db configured to drive the IGBT 31db, and a protection unit 42db configured to execute second protection operation protecting the IGBT 31db from operation in an abnormal state, and the protection unit 42db executes the second protection operation when the IGBT 31db is operating in an abnormal state and otherwise does not execute the second protection operation regardless of whether or not the protection unit 42z is executing the first protection operation.

Abstract: A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; and an external connection terminal electrically connected to the semiconductor chip and including an inner-side conductor layer, an outer-side conductor layer provided at a circumference of the inner-side conductor layer, and an insulating layer interposed between the inner-side conductor layer and the outer-side conductor layer.

Abstract: A method of manufacturing a semiconductor device, including: preparing a semiconductor substrate; forming a first semiconductor layer at a first main surface of the semiconductor substrate; forming and etching an oxide film to form a trench mask; using the trench mask to form a plurality of trenches penetrating through the first semiconductor layer; forming a plurality of gate insulating films along the surface of the first semiconductor layer and bottoms and sidewalls of the plurality of trenches; forming a polycrystalline silicon layer on the plurality of gate insulating films; etching the polycrystalline silicon layer to form a plurality of gate electrodes; selectively forming a plurality of first semiconductor regions in the first semiconductor layer; forming a first electrode at the surface of the first semiconductor layer and on the plurality of first semiconductor regions; and forming a second electrode at a second main surface of the semiconductor substrate.

Abstract: A control system for an electrically-operated railroad car end door includes, an actuator, a processor, and a memory storing program instructions that cause the processor to instruct the actuator to begin generating a braking force applied to the railroad car end door in response to an opening of the railroad car end door, and determine whether the railroad car end door is being manually opened by a person based on information related to a state of the railroad car end door while the braking force is being generated.

Abstract: [Problem] An object of the present invention is to provide a semiconductor module capable of preventing a wire wiring from being broken because of a crack having occurred in sealing resin. [Solution] A semiconductor module 1 includes semiconductor chips 14a to 14d, sealing resin 18 configured to seal the semiconductor chips 14a to 14d, a case 11 including a casting area 117u, first portions 111 and 112, and second portions 113 and 114, wire wirings 101a to 101j and 102a to 102i sealed in the sealing resin 18 while being located closer to the first portion 111 and connected to the semiconductor chips 14a to 14d, and recessed portions 131a, 131b, 132a, and 132b formed on the second portions 113 and 114 between a virtual surface VSu and the first portion 112.

Abstract: A semiconductor device includes: an insulating circuit substrate; a semiconductor element including a first main electrode bonded to a first conductor layer of the insulating circuit substrate via a first bonding material, a semiconductor substrate deposited on the first main electrode, and a second main electrode deposited on the semiconductor substrate; and a resistive element including a bottom surface electrode bonded to a second conductor layer of the insulating circuit substrate via a second bonding material, a resistive layer with one end electrically connected to the bottom surface electrode, and a top surface electrode electrically connected to another end of the resistive layer, wherein the first main electrode includes a first bonded layer bonded to the first bonding material, the bottom surface electrode includes a second bonded layer bonded to the second bonding material, and the first bonded layer and the second bonded layer have a common structure.

Abstract: Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.

Abstract: A short-circuit detector includes: a first Rogowski coil configured to generate a first detection signal in accordance with a current that flows through a first arm due to a short circuit in a load; a second Rogowski coil configured to generate a second detection signal in accordance with a current that flows through the first arm due to a short circuit in the first arm or a second arm; a load short-circuit detection circuit configured to detect the short circuit in the load, based on the first detection signal; an arm short-circuit detection circuit configured to detect the short circuit in the first arm or the second arm, based on the second detection signal; and a short-circuit detection circuit configured to detect a short-circuit, based on: an output signal output from the load short-circuit detection circuit; and an output signal output from the arm short-circuit detection circuit.