Abstract: A method of plating on a glass base plate is disclosed. The method allows a plating film to be formed on a base plate composed of a glass material with excellent adhesivity and homogeneity by means of an electroless plating method, even to a thickness of 1 ?m or more. Before forming the plating film by electroless plating, a series of surface treatments are conducted on the surface of the base plate composed of a glass material. The surface treatments comprises at least a glass activation treatment, a silane coupling agent treatment, a palladium catalyst treatment, a palladium bonding treatment, ab electroless plating to form a preliminary plating film having a thickness in the range of 0.02 ?m to 0.5 ?m, and an annealing at a temperature in the range of 200° C. to 350° C.

Abstract: A trench MOSFET includes mesa regions between the trenches. The mesa regions are connected to an emitter electrode to fix the mesa region potential so that the mesa regions do not form a floating structure. P-type base regions are distributed in the mesa regions, and the distributed p-type base regions (e.g., the limited regions in the mesa regions) are provided with an emitter structure. The trench MOSFET can lower the switching losses, reducing the total losses while suppressing the ON-state voltage drop of the trench IGBT as low as the ON-state voltage drop of the IEGT, and improving the turn-on characteristics thereof. The trench MOSFET also can reduce the capacitance between the gates and the emitter thereof, since the regions where the gate electrode faces the emitter structure are reduced. The trench MOSFET can have trench gate structures set at a narrow interval to relax the electric field localization to the bottom portions of the trenches and obtain a high breakdown voltage.

Abstract: An object of the present invention is to provide a plating method on a glass base plate. The method allows forming a plating film on a base plate composed of a glass material with excellent adhesivity and homogeneity by means of an electroless plating method even to a thickness of 1 ?m or more. Before forming a plating film by a step of electroless plating S6, a surface treatment process is conducted on a surface of the base plate composed of a glass material. The surface treatment process comprises at least a step of glass activation treatment S2 to increase quantity of silanol groups on the surface of the base plate at least by a factor of two using an aqueous solution of diluted acid, a step of silane coupling agent treatment S3, a step of palladium catalyst treatment S4, and a step of palladium bonding treatment S5.

Abstract: A semiconductor device has an n?-semiconductor layer and p+-diffusion regions each having a depth of 14 to 20 ?m (design value) selectively formed in the n? semiconductor layer. With the entire surface of the chip irradiated with light ions, such as He ions, a lifetime killer is introduced from a position d2 shallower than a position d1 of a p-n junction surface, formed from the n?-semiconductor layer and the p+-diffusion regions, to a position d3 deeper than the position d1 to form a short-lifetime region over the entire chip. The irradiation is carried out so that the light ion irradiation half width is not more than the depth of the p+-diffusion regions and a position of a peak of the light ions becomes deeper than the light ion irradiation half width and within the range between 80% and 120% of the depth of the p+-diffusion regions.

Abstract: A disk substrate for a perpendicular magnetic recording medium is, disclosed. The substrate exhibits sufficient productivity, serves the function of a soft magnetic backing layer of the perpendicular magnetic recording medium, and scarcely generates noise. A perpendicular magnetic recording medium using such a substrate also is disclosed. The disk substrate comprises at least a soft magnetic underlayer formed on a nonmagnetic base plate by means of an electroless plating method. The thermal expansion coefficient of the soft magnetic underlayer is larger than a thermal expansion coefficient of the nonmagnetic disk-shaped base plate. A saturation magnetostriction constant ?s satisfies a relation ?s??1×10?5.