Patents Assigned to Fujian Jinhua Integrated Circuit Co., Ltd.
  • Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same
    Patent number: 10685964
    Abstract: A semiconductor structure for preventing row hammering issue in DRAM cell is provided in the present invention. The structure includes a trench with a gate dielectric, an n-type work function metal layer, a TiN layer conformally formed within, and a buried word line filled in the trench.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: June 16, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Chih-Chieh Tsai, Pin-Hong Chen, Tzu-Chieh Chen, Tsun-Min Cheng, Yi-Wei Chen, Hsin-Fu Huang, Chi-Mao Hsu, Shih-Fang Tzou
  • Manufacturing method of semiconductor memory device
    Patent number: 10672864
    Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: June 2, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Tzu-Chin Wu, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Po-Chun Chen, Li-Wei Feng, Ying-Chiao Wang, Wen-Chieh Lu, Chien-Ting Ho, Tsung-Ying Tsai, Kai-Ping Chen
  • Method of forming semiconductor structure
    Patent number: 10672612
    Abstract: The present invention provides a method of forming a semiconductor structure including the following steps. Firstly, a target layer is formed on a substrate, and a plurality of mandrels is formed on the target layer. Next, a material layer is formed on the target layer to cover the mandrels. Then, an etching process is performed to partially remove each of the mandrel and the material layer covered on each mandrel, to form a plurality of mask. Finally, the target layer is patterned through the masks, to form a plurality of patterns. Through the present invention, each mask comprises an unetched portion of each mandrel and a spacer portion of the material covered on each mandrel, and a dimension of each of the patterns is larger than a dimension of each of the mandrel.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: June 2, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Gang-Yi Lin, Feng-Yi Chang, Ying-Chih Lin, Fu-Che Lee
  • Bit line gate structure of dynamic random access memory (DRAM) and forming method thereof
    Patent number: 10672774
    Abstract: A method of forming a bit line gate structure of a dynamic random access memory (DRAM) includes the following steps. A polysilicon layer is formed on a substrate. A sacrificial layer is formed on the polysilicon layer. An implantation process is performed on the sacrificial layer and the polysilicon layer. The sacrificial layer is removed. A metal stack is formed on the polysilicon layer. The present invention also provides another method of forming a bit line gate structure of a dynamic random access memory (DRAM) including the following steps. A polysilicon layer is formed on a substrate. A plasma doping process is performed on a surface of the polysilicon layer. A metal stack is formed on the surface of the polysilicon layer.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: June 2, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Yi-Wei Chen, Pin-Hong Chen, Tsun-Min Cheng, Chun-Chieh Chiu
  • Method for forming a layout pattern
    Patent number: 10670958
    Abstract: A method of forming a layout pattern is disclosed. First, an array comprising a plurality of main features is provided wherein the main features are arranged into a plurality of rows along a first direction and are parallel and staggered along a second direction. Assistant features are inserted into each row of the main features. A shortest distance d1 between the main features in row n to the main features in row n+1 and a shortest distance d2 between the main feature in row n?1 to the main feature in row n+1 are obtained. The assistance features inserted in row n of the main features are then adjusted according to the difference between the distances d1 and d2. After that, the main features and the assistant features are output to a photo mask.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: June 2, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Ying-Chiao Wang, Yu-Cheng Tung, Li-Wei Feng, Chien-Ting Ho
  • Method of forming semiconductor memory device
    Patent number: 10672648
    Abstract: A method of forming a semiconductor memory device includes following steps. First of all, a dielectric layer is formed on a semiconductor substrate, and a conductive pad is formed in the dielectric layer. Then, a stacked structure is formed on the dielectric layer, and the stacked structure includes a first layer, a second layer and a third layer stacked one over another on the conductive pad. Next, a patterned mask layer is formed on the stacked structure, and a portion of the stacked structure is removed, to form an opening in the stacked structure, with the opening having a tapered sidewall in the second layer and the first layer. After that, the tapered sidewall of the opening in the second layer is vertically etched, to form a contact opening in the stacked structure. Finally, the patterned mask layer is removed.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: June 2, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Yi-Wang Zhan
  • Semiconductor memory device including gate structure
    Patent number: 10665594
    Abstract: A semiconductor memory device includes a semiconductor substrate, a gate structure, a first spacer structure, and a gate connection structure. The semiconductor substrate includes a memory cell region and a peripheral region. The gate structure is disposed on the semiconductor substrate and disposed on the peripheral region. The gate structure includes a first conductive layer and a gate capping layer. The gate capping layer is disposed on the first conductive layer. The first spacer structure is disposed on a sidewall of the first conductive layer and a sidewall of the gate capping layer. The gate connection structure includes a first part and a second part. The first part penetrates the gate capping layer and is electrically connected with the first conductive layer. The second part is connected with the first part, and the second part is disposed on and contacts a top surface of the gate capping layer.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: May 26, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Li-Wei Feng, Ying-Chiao Wang, Shih-Fang Tzou
  • Semiconductor device and method for fabricating the same
    Patent number: 10658369
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner in the first trench and the second trench; forming a second liner on the first liner, wherein the second liner completely fills the first trench and partly fills the second trench; and planarizing the second liner and the first liner to form a first isolation structure and a second isolation structure.
    Type: Grant
    Filed: July 4, 2018
    Date of Patent: May 19, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Kun-Hsin Chen, Hsuan-Tung Chu, Tsuo-Wen Lu, Po-Chun Chen
  • Method for fabricating a semiconductor structure on a semiconductor wafer
    Patent number: 10658173
    Abstract: A method for fabricating a semiconductor structure on a semiconductor wafer is disclosed. A semiconductor wafer having a first region, a second region, and a wafer bevel region is provided. The wafer bevel region has a silicon surface. A first semiconductor structure is formed in the first region and a second semiconductor structure is formed in the second region. The semiconductor wafer is subjected to a bevel plasma treatment to form a blocking layer only in the wafer bevel region. A silicidation process is then performed to form a silicide layer only in the first region and the second region.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: May 19, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Chieh-Te Chen, Ching-Pin Hsu
  • Patterning method utilizing dummy mandrel
    Patent number: 10658178
    Abstract: A method of forming a capacitor mask includes the following steps. A bulk mandrel and a plurality of strip mandrels are formed on a mask layer. Spacers are formed on sidewalls of the bulk mandrel and the strip mandrels. The strip mandrels are removed while the bulk mandrel is reserved. A material fills in space between the spacers and on the bulk mandrel, wherein the material has a flat top surface. A patterned photoresist is formed to cover the bulk mandrel and a part of the spacers but exposing the other part of the spacers after filling the material.
    Type: Grant
    Filed: July 1, 2018
    Date of Patent: May 19, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Ying-Chih Lin, Gang-Yi Lin
  • Semiconductor device and method for fabricating the same
    Patent number: 10658366
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a material layer having a contact pad therein; forming a dielectric layer on the material layer and the contact pad; forming a doped oxide layer on the dielectric layer; forming an oxide layer on the doped oxide layer; performing a first etching process to remove part of the oxide layer, part of the doped oxide layer, and part of the dielectric layer to form a first contact hole; performing a second etching process to remove part of the doped oxide layer to form a second contact hole; and forming a conductive layer in the second contact hole to form a contact plug.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: May 19, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Chia-Liang Liao, Feng-Yi Chang, Fu-Che Lee, Chieh-Te Chen, Yi-Wang Zhan
  • Dynamic random access memory
    Patent number: 10658368
    Abstract: A dynamic random access memory (DRAM) includes a first bit line extending along a first direction, a first buried word line extending along a second direction, and an active region overlapping part of the first bit line and part of the first buried word line. Preferably, the active region comprises a V-shape. Moreover, the DRAM also includes at least a storage node contact overlapping one end of the active region, in which the storage node contact includes an ellipse.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: May 19, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Wan-Chi Wu, Kai-Ping Chen, Hong-Ru Liu
  • Semiconductor device and method of manufacturing the same
    Patent number: 10658365
    Abstract: A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: May 19, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Li-Wei Feng, Shih-Fang Tzou, Chien-Cheng Tsai, Chih-Chi Cheng, Chia-Wei Wu, Ger-Pin Lin
  • Semiconductor device and method for fabricating the same
    Patent number: 10651040
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: May 12, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Tzu-Hao Liu, Yi-Wei Chen, Tsun-Min Cheng, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Po-Chih Wu, Pin-Hong Chen, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chien Liu, Chih-Chieh Tsai, Ji-Min Lin
  • Method of forming isolation structure
    Patent number: 10643883
    Abstract: A method of forming an isolation structure includes the following steps. A substrate having a first trench, a second trench and a third trench is provided, wherein the opening of the third trench is larger than the opening of the second trench, and the opening of the second trench is larger than the opening of the first trench. A first oxide layer is formed to conformally cover the first trench, the second trench and the third trench by an atomic layer deposition (ALD) process. A second oxide layer fills up the first trench by an in-situ steam generation (ISSG) process.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: May 5, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Po-Chun Chen, Hsuan-Tung Chu, Yi-Wei Chen, Wei-Hsin Liu, Yu-Cheng Tung, Chia-Lung Chang
  • Semiconductor device and method for fabricating the same
    Patent number: 10636797
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a logic region; forming a stack structure on the memory region and a gate structure on the logic region; forming a first cap layer on the stack structure and the gate structure; performing an oxidation process to form an oxide layer on the first cap layer; forming a second cap layer on the oxide layer; and removing part of the second cap layer, part of the oxide layer, and part of the first cap layer on the logic region to form a spacer adjacent to the gate structure.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: April 28, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Wen-Fu Huang, Fu-Che Lee
  • Semiconductor device and method for fabricating the same
    Patent number: 10636798
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner, a second liner, and a third liner in the first trench and the second trench; performing a surface treatment process to lower stress of the third liner; and planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: April 28, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Yu-Shan Su, Chia-Wei Wu, Ting-Pang Chung
  • Capacitor structure and fabrication method thereof
    Patent number: 10622362
    Abstract: A capacitor structure includes a semiconductor substrate, a dielectric layer disposed on the semiconductor substrate, a storage node pad disposed in the dielectric layer, and a cylindrical lower electrode including a bottom portion recessed into the dielectric layer and in contact with the storage node pad. The bottom extends to a sidewall of the storage node pad.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: April 14, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Yi-Wang Zhan, Chieh-Te Chen
  • Semiconductor structure and method of forming the same
    Patent number: 10619266
    Abstract: A method for forming a semiconductor structure is disclosed. A substrate is provided. A pad metal and a fuse metal are formed on the substrate. A liner is formed on the pad metal and on the fuse metal. An etching stop layer is formed on the portion of the liner on the fuse metal. A dielectric layer and a passivation layer are formed on the liner and on the etching stop layer. After defining a pad opening and a fuse opening in the passivation layer, a first etching step is performed to remove the dielectric layer from the pad opening and the fuse opening until the pad metal and the etching stop layer are exposed. Afterward, a second etching step is performed to remove the exposed etching stop layer from the fuse opening until the liner on the fuse metal is exposed.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: April 14, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Ming-Feng Kuo
  • Semiconductor device and method of forming the same
    Patent number: 10608093
    Abstract: A semiconductor device and a method of forming the same are disclosed. First, a substrate having a main surface is provided. At least a trench is formed in the substrate. A barrier layer is formed in the trench and a conductive material is formed on the barrier layer and filling up the trench. The barrier layer and the conductive material are then recessed to be lower than the upper surface of the substrate. After that, an oxidation process is performed to oxidize the barrier layer and the conductive material thereby forming an insulating layer.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: March 31, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Chia-Wei Wu, Ting-Pang Chung, Tien-Chen Chan, Shu-Yen Chan