Abstract: The present invention provides a lapping plate, which provides a high lapping rate and also can suppress the generation of scratches on a surface of a polishing workpiece. The present invention provides a resin lapping plate comprising a resin sheet comprising a thermosetting polyurethane resin and having an opening rate of 10 to 50% and a Young's modulus of 7.0×107 to 5.0×108 N/m2.

Abstract: A polishing pad comprising a resin-containing polishing cloth having a polishing cloth base impregnated with a polyurethane resin and silicon carbide, wherein the silicon carbide has a particle diameter in a range from 0.2 to 3.0 ?m, and the content of the silicon carbide in the resin-containing polishing cloth is in a range from 60 to 500 parts by mass relative to 100 parts by mass of the polishing cloth base.

Abstract: A test reagent container includes: a bottom part; a peripheral wall part on the periphery of the bottom part; a storage part which opens upward and with an internal diameter of an inner peripheral wall decreased with depth; a film which seals the opening of the storage part; a discharge channel which penetratingly passes from an inner bottom surface of the storage part to the bottom part of the container body; a projecting part formed downwardly projecting from the bottom part to seal an outlet of the discharge channel; a breakable part including a thick-walled part and a thin-walled part thinner than the thick-walled part formed on the periphery of the projecting part. The breakable part is broken when the projecting part is depressed from outside of the container, the projecting part is inserted into the inside of the discharge channel, and the sealed state of the outlet is released.

Abstract: A test reagent container including a discharge port, formed by depressing a projecting part formed on a container bottom part, through which content can be easily and reliably discharged. The test reagent container includes: a bottom part; a peripheral wall raised approximately perpendicularly from a periphery of the bottom part; and a storage part defined by the bottom part and peripheral wall. A projecting part is formed on the bottom part in a projecting manner toward outside the container. A proximal end of the projecting part is formed in a bendable manner relative to the bottom part, and an easily breakable part is formed on a periphery of the projecting part except for the proximal end of the projecting part. The easily breakable part is broken when the projecting part is depressed from outside the container to be pushed into the inside of the container to form a discharge port.

Abstract: Provided are: a polishing pad which is capable of alleviating a scratch problem that occurs when a conventional hard (dry) polishing pad is used, and which is excellent in polishing rate and polishing uniformity and is usable not only for primary polishing but also for finish polishing; and a method for producing the polishing pad. The polishing pad is for polishing a semiconductor device and includes a polishing layer having a polyurethane-polyurea resin molded body containing cells of a substantially spherical shape. The polyurethane-polyurea resin molded body has a ratio of closed cells of 60 to 98%. The polyurethane-polyurea resin molded body has a ratio tan ? of a loss modulus E? to a storage modulus E? (loss modulus/storage modulus) of 0.15 to 0.30. The storage modulus E? is 1 to 100 MPa. The polyurethane-polyurea resin molded body has a density D of 0.4 to 0.8 g/cm3.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.

Abstract: A test reagent container includes: a bottom part; a peripheral wall part on the periphery of the bottom part; a storage part which opens upward and with an internal diameter of an inner peripheral wall decreased with depth; a film which seals the opening of the storage part; a discharge channel which penetratingly passes from an inner bottom surface of the storage part to the bottom part of the container body; a projecting part formed downwardly projecting from the bottom part to seal an outlet of the discharge channel; a breakable part including a thick-walled part and a thin-walled part thinner than the thick-walled part formed on the periphery of the projecting part. The breakable part is broken when the projecting part is depressed from outside of the container, the projecting part is inserted into the inside of the discharge channel, and the sealed state of the outlet is released.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r?1)×(Mdi+Mda)÷(Mg+r×Mdi+(r?1)×Mda)??(1).

Abstract: A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 ?s, the polyurethane-polyurea resin foam has a storage elastic modulus E? of 1 to 30 MPa, the storage elastic modulus E? being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.

Abstract: A polishing pad which suppresses occurrence of a scratch or a roll-off on an object to be polished so that flatness is improved is provided. A polishing pad 1 is comprised a polyurethane sheet 2 having a polishing surface P for performing polishing processing to an object to be polished and an elastic sheet 3 having elasticity joined on a surface of the polyurethane sheet 2 on the opposite side to the polishing surface P. The polyurethane sheet 2 is set higher in compressibility than the elastic sheet 3, and is set lower in A hardness than the elastic sheet 3. The elastic sheet 3 is set at 1% or more in compressibility, and is set at 90 degrees or less in A hardness. Further, both of the polyurethane sheet 2 and the elastic sheet 3 are formed to have a thickness of 0.2 mm or more. The flexibility of the polyurethane sheet 2 is exerted during polishing processing so that the polyurethane sheet 2 deforms to press the polishing surface P approximately evenly on the object to be polished.

Abstract: A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing pad 10 is equipped with a urethane sheet 2. The urethane sheet 2 has a polishing surface P for polishing an object to be polished. The urethane sheet 2 is formed by a dry molding method and is formed by slicing a polyurethane foamed body which is obtained by reacting and curing mixed liquid in which an isocyanate-group containing compound, water, a foam control agent and a polyamine compound are mixed. Foams 3 are dispersed approximately uniformly inside the urethane sheet 2. Opened pores 4 which are opened parts of the foams 3 are formed at the polishing surface P. Inside the urethane sheet 2, the foams 3 formed adjacently to each other are communicated by communication holes 9, and the communication holes 9 are formed at a ratio of 800 holes/cm2 or more when observed from a side of the polishing surface P. Polishing liquid moves via the communication holes 9 and the foams 3.

Abstract: A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing pad 10 is equipped with a urethane sheet 2. The urethane sheet 2 has a polishing surface P for polishing an object to be polished. The urethane sheet 2 is formed by a dry molding method and is formed by slicing a polyurethane foamed body which is obtained by reacting and curing mixed liquid in which an isocyanate-group containing compound, water, a foam control agent and a polyamine compound are mixed. Foams 3 are dispersed approximately uniformly inside the urethane sheet 2. Opened pores 4 which are opened parts of the foams 3 are formed at the polishing surface P. Inside the urethane sheet 2, the foams 3 formed adjacently to each other are communicated by communication holes 9, and the communication holes 9 are formed at a ratio of 800 holes/cm2 or more when observed from a side of the polishing surface P. Polishing liquid moves via the communication holes 9 and the foams 3.

Abstract: A polishing sheet which can improve waviness at a face of a material to be polished and which has a long life is provided. The polishing pad 1 has a polyurethane sheet 2 made of polyurethane resin. The polyurethane sheet 2 has a polishing layer which is disposed inside a surface layer and which is allowed to wear away by polishing and whose thickness is larger than a thickness of the surface layer. The polishing layer has an approximately uniform foam structure in a direction of the thickness of the polishing sheet 2 by being formed foams whose space volume is larger than that of foams formed at the surface layer and which are communicated so as to form a network by continuous holes.

Abstract: The present invention provides a polishing pad whose unevenness in thickness hardly occurs and whose life can be improved. A polishing pad 1 is provided with a polyurethane sheet 2. Foams 3 having lengths of about ½ of the length of the polyurethane sheet 2 in its thickness direction and elongated foams 4 having lengths of at least 70% of the length of the polyurethane sheet 2 in the thickness direction are formed in the polyurethane sheet 2. The foams 3 and the elongated foams 4 are opened by buffing processing so that opened pores 5 and opened pores 6 are formed at a polishing face P, respectively. Regarding the opened pores 5, 6, the total number of opened pores having opened pore diameters falling in a range of from 30 to 50 ?m occupies at least 50% of the number of all opened pores. The total number of the opened pores 5, 6 per 1 mm2 of the polishing face P is set in a range of from 50 to 100.

Abstract: A polishing pad which suppresses occurrence of a scratch or a roll-off on an object to be polished so that flatness is improved is provided. A polishing pad 1 is comprised a polyurethane sheet 2 having a polishing surface P for performing polishing processing to an object to be polished and an elastic sheet 3 having elasticity joined on a surface of the polyurethane sheet 2 on the opposite side to the polishing surface P. The polyurethane sheet 2 is set higher in compressibility than the elastic sheet 3, and is set lower in A hardness than the elastic sheet 3. The elastic sheet 3 is set at 1% or more in compressibility, and is set at 90 degrees or less in A hardness. Further, both of the polyurethane sheet 2 and the elastic sheet 3 are formed to have a thickness of 0.2 mm or more. The flexibility of the polyurethane sheet 2 is exerted during polishing processing so that the polyurethane sheet 2 deforms to press the polishing surface P approximately evenly on the object to be polished.

Abstract: A polishing sheet which can improve waviness at a face of a material to be polished and which has a long life is provided. The polishing pad 1 has a polyurethane sheet 2 made of polyurethane resin. The polyurethane sheet 2 has a polishing layer which is disposed inside a surface layer and which is allowed to wear away by polishing and whose thickness is larger than a thickness of the surface layer. The polishing layer has an approximately uniform foam structure in a direction of the thickness of the polishing sheet 2 by being formed foams whose space volume is larger than that of foams formed at the surface layer and which are communicated so as to form a network by continuous holes.

Abstract: The present invention provides a polishing pad whose unevenness in thickness hardly occurs and whose life can be improved. A polishing pad 1 is provided with a polyurethane sheet 2. Foams 3 having lengths of about ½ of the length of the polyurethane sheet 2 in its thickness direction and elongated foams 4 having lengths of at least 70% of the length of the polyurethane sheet 2 in the thickness direction are formed in the polyurethane sheet 2. The foams 3 and the elongated foams 4 are opened by buffing processing so that opened pores 5 and opened pores 6 are formed at a polishing face P, respectively. Regarding the opened pores 5, 6, the total number of opened pores having opened pore diameters falling in a range of from 30 to 50 ?m occupies at least 50% of the number of all opened pores. The total number of the opened pores 5, 6 per 1 mm2 of the polishing face P is set in a range of from 50 to 100.