Abstract: There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30° C.

Abstract: There is provided a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in storage stability. In addition, there is provided a method of cleaning semiconductor substrates having undergone CMP. The cleaning liquid for semiconductor substrates having undergone CMP shows alkaline properties and contains: an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts; a chelating agent; and water. The amine compound content is not less than 25.5 mass % and less than 90 mass % based on the total mass of the cleaning liquid, and the water content is 10 to 60 mass % based on the total mass of the cleaning liquid.

Abstract: An object of the present invention is to provide a cleaning liquid for semiconductor substrates with a change in the pH of the cleaning liquid caused by dilution being suppressed.

Abstract: The present invention addresses the problem of providing a kit for a cleaning agent, which is used for the purpose of preparing a cleaning agent that maintains, even after long-term storage, adequate impurity removal performance from the surface of a semiconductor substrate that has been subjected to a CMP process. The present invention also addresses the problem of providing a method for preparing the above-described cleaning agent. A kit for a cleaning agent according to the present invention is a kit for preparing a cleaning agent which is used for cleaning of a semiconductor substrate that has been subjected to a CMP process, and which has a pH of from 7.5 to 13.0. This kit for a cleaning agent comprises a first liquid that is acidic and contains a compound represented by formula (1) and a second liquid that is alkaline and contains a basic compound; and an acidic compound is contained in at least one of the first liquid and the second liquid.