Patents Assigned to Fujifilm Planar Solutions, LLC
  • Patent number: 10167415
    Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: January 1, 2019
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: James McDonough, Laura John, Deepak Mahulikar
  • Patent number: 10159949
    Abstract: This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: December 25, 2018
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Shih-Pin Chou, Wen-Hung Chang, Deepak Mahulikar, Tamas Varga, Abhudaya Mishra
  • Patent number: 10106705
    Abstract: The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): 3) at least one compound of structure (II): and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R1-R7, X, Y, and Z1-Z3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: October 23, 2018
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Alexei P. Leonov, Abhudaya Mishra
  • Patent number: 9914852
    Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: March 13, 2018
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: James McDonough, Laura John, Deepak Mahulikar
  • Patent number: 9735030
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: August 15, 2017
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Patent number: 9735031
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: August 15, 2017
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Patent number: 9583359
    Abstract: Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: February 28, 2017
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Abhudaya Mishra, Luling Wang
  • Patent number: 9556371
    Abstract: A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 7400 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: January 31, 2017
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Saeed H. Mohseni, Elizabeth K. Gramm, Deepak Mahulikar
  • Patent number: 9558959
    Abstract: Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: January 31, 2017
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Abhudaya Mishra, Luling Wang
  • Patent number: 9190286
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: November 17, 2015
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Publication number: 20140238441
    Abstract: A system for removing particles or deposits from a surface having particles or deposits thereon, the system comprising at least one vessel, at least one enclosure containing a surface having particles or deposits thereon, one or more pumps, and one or more valves; the at least one vessel suitable for holding a chemical composition; wherein the at least one vessel is in fluid communication with the at least one enclosure, and the at least one enclosure is in fluid communication with the at least one vessel, to form at least a primary chemical composition circulation loop.
    Type: Application
    Filed: May 13, 2014
    Publication date: August 28, 2014
    Applicant: Fujifilm Planar Solutions, LLC
    Inventors: Saeed Mohseni, Deepak Mahulikar, Elizabeth Gramm
  • Patent number: 8779011
    Abstract: A method for producing and using an ultrapure colloidal silica dispersion is disclosed. The ultrapure colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and less than 2 ppm residual alcohol. The method comprises dissolving a fumed silica in an aqueous solvent comprising an alkali metal hydroxide to produce an alkaline silicate solution, removing the alkali metal via ion exchange to generate a silicic acid solution, adjusting temperature, concentration and pH of said silicic acid solution to values sufficient to initiate nucleation and particle growth, and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: July 15, 2014
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Deepak Mahulikar, Yuhu Wang, Ken A. Delbridge, Gert R. M. Moyaerts, Saeed H. Mohseni, Nichole R. Koontz, Bin Hu, Liqing Wen
  • Patent number: 8771540
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: July 8, 2014
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Patent number: 8742130
    Abstract: The present invention provides new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. The present invention also discloses processes for manufacturing new hydrate forms of triazole, triazole alkaline salt, and alkali-doped 1,2,4-triazole. The present invention also relates to compositions for different applications of new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. In addition, the present invention provides co-crystal form of triazole with acid, and methods of preparing thereof.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: June 3, 2014
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Deepak Mahulikar, Luling Wang
  • Publication number: 20140121382
    Abstract: The present invention provides new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. The present invention also discloses processes for manufacturing new hydrate forms of triazole, triazole alkaline salt, and alkali-doped 1,2,4-triazole. The present invention also relates to compositions for different applications of new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. In addition, the present invention provides co-crystal form of triazole with acid, and methods of preparing thereof.
    Type: Application
    Filed: November 1, 2012
    Publication date: May 1, 2014
    Applicant: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Deepak Mahulikar, Luling Wang
  • Patent number: 8404143
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Grant
    Filed: February 22, 2012
    Date of Patent: March 26, 2013
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Patent number: 8211193
    Abstract: A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: July 3, 2012
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Deepak Mahulikar, Yuhu Wang, Ken A. Delbridge, Gert R. M. Moyaerts, Saeed H. Mohseni, Nichole R. Koontz, Bin Hu, Liqing Wen
  • Patent number: 8192644
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: June 5, 2012
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar