Abstract: An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

Abstract: Provided herein are compositions and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films.

Abstract: Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.

Abstract: Provided herein are compositions and methods for polishing surfaces comprising cobalt and optionally a low-K material, e.g., in semiconductor device fabrication. Also provided herein are compositions and methods for polishing surfaces comprising a metal and/or silicate material and a low-K material. Embodiments include a slurry for chemical mechanical polishing a surface comprising cobalt and low-K materials, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a Co corrosion inhibitor and an ILD suppressor. Embodiments also include a slurry for chemical mechanical polishing a surface comprising a metal and/or silicate material such as cobalt, copper, tantalum, and/or TEOS and a low-K material, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a corrosion inhibitor, and a non-ionic surfactant.

Abstract: Provided herein are compositions and methods for polishing surfaces comprising cobalt and optionally a low-K material, e.g., in semiconductor device fabrication. Embodiments include a slurry for chemical mechanical polishing a surface comprising cobalt and low-K materials, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a Co corrosion inhibitor and an ILD suppressor.

Abstract: Provided herein are methods and compositions for selective polishing of a work function metal containing substrate. The present methods and compositions involve the use of a liquid carrier an anionic surfactant and a colloidal silica particle. The present methods and compositions can be used to achieve selective polishing of the work function metal.

Abstract: A polishing composition used for chemical mechanical planarization of a substrate containing a noble metal layer is provided. The polishing composition contains positively-charged abrasive particles such as alpha-Al2O3 particles, theta-Al2O3 particles, delta-Al2O3 particles, gamma-Al2O3 particles, fumed Al2O3 particles, aluminum-modified SiO2 particles, organosilane-modified SiO2 particles, CeO2 particles, TiO2 particles, and ZrO2 particles, an inorganic salt such as KCl, RbCl, CsCl, MgCl2, CaCl2, SrCl2, BaCl2, and NH4Cl, an oxidizing agent such as H2O2, an inorganic acid such as HCl, and water.