Abstract: A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed above the electrodes; and an opposing electrode formed above the dielectric films, wherein the shape of a side wall of the insulating film includes a shape reflecting the outer peripheral shape of a side wall of the electrode facing the side wall of the insulating film. The semiconductor device of high integration, low cost and high reliability can be realized.

Abstract: A semiconductor device includes signal lines over which signals are transferred, and a drive circuit driving the signal lines in operating modes. The operating modes include a dynamic operation mode in which the signal lines are precharged, and a static operation mode in which the signal lines are not precharged.

Abstract: A semiconductor device includes a word line that is reset to a negative voltage when the word line is unselected. The semiconductor device further includes a sequence circuit that clamps the word line to a first fixed voltage, until a fixed power-supply voltage that is supplied to a memory cell connected to the word line reaches a second fixed voltage, at a time of starting power supply. Thus, the semiconductor device can prevent a negative power-supply voltage used for resetting the word line from rising, and can reduce consumed energy.

Abstract: A semiconductor device is fabricated by a method comprising the steps of: selectively introducing a halogen element or argon into a device region 14 of a silicon substrate 10; and wet oxidizing the silicon substrate 10 in an ambient atmosphere which an H2O partial pressure is less than 1 atm to thereby form a silicon oxide film 22 in the device region 14 of the silicon substrate 10, and a silicon oxide film 24 thinner than the silicon oxide film 22 in a device region 16 of the silicon substrate 10. Whereby the silicon oxide film in a device region 14 with the halogen element or argon introduced can be selectively formed thick. The silicon oxide films are formed by the wet oxidation, whereby the gate insulation films can be more reliable than those formed by the dry oxidation.