Patents Assigned to Fujitsu Limtied
  • Patent number: 8867396
    Abstract: A method for device identification includes determining a mass event has occurred in a wireless network from a reception of a plurality of signals each having a last gasp message, sampling a plurality of mapped zones associated with a base station, identifying which mapped zones are associated with a disconnected endpoint in a zone list, determining a length of time of the mass event, and selectively providing the zone list to identify disconnected endpoints based at least upon the length of time of the mass event. Each mapped zone includes a plurality of wireless device endpoints associated with the mapped zone. The sampling includes determining whether any of a subset of the endpoints associated with the given mapped zone are disconnected from the wireless network.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: October 21, 2014
    Assignee: Fujitsu Limtied
    Inventors: Dorin Viorel, Akira Ito
  • Patent number: 8140121
    Abstract: There is provided a base station apparatus which allocates communication bands for terminal units from an available communication band, and performs wireless communications with the terminal units using the allocated communication bands, including: a priority table storing priority information used for deriving a priority of the communication; a detecting part detecting a situation change concerning the communications; a band derivation part deriving communication bands required for the communications with terminal units to communicate, when the detecting part detects the situation change; a priority derivation part deriving priorities of the communications with the terminal units on the basis of the priority information stored in the priority table; and an allocating part allocating the communication bands derived by the band derivation part for the wireless communications with the terminal units in the order of descending priorities derived by the priority derivation part.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: March 20, 2012
    Assignee: Fujitsu Limtied
    Inventors: Ryuichi Matsukura, Shingo Fujimoto, Motoshi Sumioka, Ryo Miyamoto
  • Patent number: 6985315
    Abstract: A magnetic disk evaluation apparatus includes an evaluation head for evaluating a magnetic disk, and a support member for supporting the evaluation head. The support member supports the evaluation head in a state where a flying surface of the evaluation head and a surface of a magnetic disk make a flying pitch angle of 95 ?rad or more.
    Type: Grant
    Filed: January 27, 2002
    Date of Patent: January 10, 2006
    Assignee: Fujitsu Limtied
    Inventors: Toru Yokohata, Yoshiharu Kasamatsu, Satoru Momose, Takayuki Yamamoto
  • Patent number: 6605414
    Abstract: A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.
    Type: Grant
    Filed: November 12, 1999
    Date of Patent: August 12, 2003
    Assignee: Fujitsu Limtied
    Inventors: Keiji Watanabe, Koji Nozaki, Miwa Igarashi, Yoko Kuramitsu, Ei Yano, Takahisa Namiki, Hiroshi Shirataki, Keita Ohtsuka, Michiaki Kanamine, Yuji Uehara
  • Patent number: 6483155
    Abstract: A semiconductor device has first and second active regions defined on the principal surface of a silicon substrate, a first n-channel MOS transistor formed in the first active region and having first extension regions and first pocket regions being deeper than the first extension regions and being doped with indium at a first concentration, and a second n-channel MOS transistor formed in the second active region and having second extension regions and second pocket regions being deeper than the second extension regions and being doped with indium at a second concentration lower than the first concentration. Boron ions may be implanted into the second pocket regions. The pocket regions can be formed by implanting indium ions and an increase in leak current to be caused by indium implantation can be reduced.
    Type: Grant
    Filed: January 17, 2002
    Date of Patent: November 19, 2002
    Assignee: Fujitsu Limtied
    Inventors: Hajime Wada, Kenichi Okabe, Kou Watanabe