Abstract: There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser. Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 ?m square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 ?m square away from the one hole to produce four light emitting spots.

Abstract: There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser. Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 ?m square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 ?m square away from the one hole to produce four light emitting spots.

Abstract: A surface-emitting semiconductor laser includes a first reflection layer formed on a substrate; an active layer formed on the first reflection layer; a second reflection layer formed on the active region; an electrode that has an aperture that defines a light emission range and is provided on the second reflection layer so that an uppermost layer of the second reflection layer is exposed through the aperture; and a third reflection layer that is provided on the electrode so as to cover the aperture. The third reflection layer includes a conductive film that electrically contacts the uppermost layer of the second reflection layer.

Abstract: There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser.