Abstract: An optical system configured to apply a relative phase modulation between two orthogonal polarization modes using a double pass configuration, wherein the system is configured to act independently on each polarization state.

Abstract: Identifying 3D objects A method for identification of 3D objects comprises illuminating at least part of a 3D object with electromagnetic radiation, spectroscopically obtaining spectral data for one or more regions of the 3D object, and generating, at a data processing apparatus, an identification result for the 3D object using a trained machine learning model. The trained machine learning model processes the obtained spectral data for the one or more regions to generate one or more model outputs from which the identification result is derived.

Abstract: Light source device comprising a light source and an optical component, wherein the optical component comprises a receiving section for receiving light from the light source and an emitting section for emitting light, wherein the light source is a non-coherent light source and is adapted to emit light from a two-dimensional region and wherein the optical component is adapted to guide the light from the receiving section to the emitting section such that the light can be emitted in a one dimensional pattern at the emitting section.

Abstract: The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot); —a voltage detector to detect an output voltage (Vo) stored in the total capacitance (Ctot). The system further comprises means to apply a gate voltage (Vg) to the gate electrode structure (G, BE) selected to: —make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and —tune the quantum capacitance (Cq). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Abstract: Provided is an electro-optical modulator, particularly a double layer graphene modulator having an optimized arrangement to provide both a large optical bandwidth and a high optical transmission for light travelling through an optical waveguide of the modulator, wherein at least one of a top and a bottom graphene sheets extends along a X-direction: above part of the width of the optical waveguide, wherein that part ranges from 50% to 100% of the width of the optical waveguide; or completely above the whole width of the optical waveguide, and beyond through a respective further projecting portion with a length, along the X direction, of up to 25% of the optical waveguide width. Provided is also a method for obtaining the electro-optical modulator of the invention.

Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and—a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or—is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Abstract: The present invention relates to an optoelectronic apparatus, comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and—drain (D) and source (S) electrodes electrically connected to the transport structure (T); —a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time ?tr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor 5 layer (3), and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Abstract: System and computer-implemented method for detecting and categorizing pathologies through an analysis of pulsatile blood flow. The method has a pulsatile blood flow signal of a subject, extracting a set of features from the pulsatile blood flow signal; and categorizing a pathology based on the extracted features. The extracted features may be predetermined features or features learned through a machine learning algorithm. For the categorization, a classification or a regression algorithm may be used to provide an index or a value score as a biomarker. Additional static features of the subject may be used in the categorization.

Abstract: The invention relates to an apparatus for probing a sample comprising a light source for emitting an illuminating light beam, a birefringent element for splitting the illuminating light beam into two sheared beams, a reflective element for reflecting the two sheared beams, wherein the apparatus is configured such that the reflected beams propagate through the birefringent element for recombining the reflected beams, and a detector for detecting the recombined beam, wherein the sample is arrangeable in the optical path of the sheared beams or at the backside of a reflective surface in the optical path of the sheared beams, the reflective surface exhibiting a surface plasmon resonance or a localized surface plasmon resonance.

Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Abstract: The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising: —an antenna having one or more antenna branches (A1; A1, A2) and adapted to operate in the THz and/or IR and/or MW frequency range; and —a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A1; A1, A2) is dimensionally equal or smaller than the photo-active area (Ga).

Abstract: The present invention relates to a method for producing a 3D object and to a system adapted to implement the method, wherein the method comprises: —providing a powder material (G); —providing a radiation absorbent material, in the form of optically resonant particles (P), on a region to be sintered of the powder material; and—sintering the region to be sintered of the powder material (G), by exposing to light the optically resonant particles (P) to radiation. The method comprises providing the optically resonant particles (P) according to a distribution and proportion, with respect to the powder material (G) included in the region to be sintered, selected: —to disperse the optically resonant particles (P) within the powder material (G) included in said region, and—to avoid substantial agglomeration and substantial self-sintering of the optically resonant particles (P).

Abstract: The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

Abstract: The present invention relates to a system comprising an electronic apparatus which comprises:—an electronic device comprising:—a gate electrode (G, BE);—a dielectric (D) arranged over the gate electrode (G, BE); and—a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot);—a voltage detector to detect an output voltage (Vo) stored in the total capacitance (Ctot). The system further comprises means to apply a gate voltage (Vg) to the gate electrode structure (G, BE) selected to:—make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and—tune the quantum capacitance (Cq). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and —a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or —is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Abstract: The disclosure relates to a method and an imaging device for multi-color imaging using frequency-modulated illumination. The method comprises a step of providing electromagnetic radiation with a plurality of different wavelengths, comprising a step of modulating each wavelength with a different modulation frequency, a step of illuminating a target with the modulated electromagnetic radiation, in particular for excitation of a target, a step of sensing electromagnetic radiation emitted from the target, in particular the luminescence, more in particular the fluorescence, and a step of processing the data obtained in the step of sensing.

Abstract: Provided is a method for producing an electrically conductive composite, wherein the method includes: a) providing a bed of a polymer in a non-continuous solid form; b) providing, on the polymer bed, a composition that comprises a chemical precursor dissolved in a liquid medium made to inhibit a chemical reaction of the chemical precursor into forming an electrically conductive inorganic component; c) forming an electrically conductive inorganic component from a chemical reaction of the chemical precursor, by at least evaporating the liquid medium; and d) exposing to electromagnetic radiation an electromagnetic radiation absorber of the composition, to sinter those portions of said polymer bed in thermal contact therewith, to form a polymer network that percolates an electrically conductive network formed with the electrically conductive inorganic component. Also provided are a system and a package adapted to implement the presently disclosed method.

Abstract: The present invention relates to an optoelectronic apparatus, comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and—drain (D) and source (S) electrodes electrically connected to the transport structure (T); —a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time ?tr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode structure (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot); —a read-out circuit configured so that when the total capacitance (Ctot) changes due to a change in the quantum capacitance (Cq), an imbalance between the total capacitance (Ctot) and the reference capacitance (Cf) results in a change on the output voltage (Vo) that is amplified to provide the read-out signal (So). The present invention also relates to an electronic apparatus like the one of the system of the present invention.